BBY 51-02W
Semiconductor Group
Jul-23-1998
1
Silicon Tuning Diode
Preliminary data
High Q hyperabrupt tuning diode
Low series inductance
Designed for low tuning voltage operation
For VCO's in mobile communications equipment
1
VES05991
2
Type
Marking
Ordering Code
Pin Configuration
Package
BBY 51-02W
I
Q62702-B0858
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Unit
Value
Diode reverse voltage
V
R
V
7
Forward current
I
F
mA
20
-55 ...+150
Operating temperature range
C
T
op
Storage temperature
T
stg
-55 ...+150
Semiconductor Group
1
1998-11-01
BBY 51-02W
Semiconductor Group
Jul-23-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
I
R
-
-
10
nA
Reverse current
V
R
= 6 V
I
R
-
-
100
Reverse current
V
R
= 6 V,
T
A
= 65 C
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
V
R
= 4 V,
f = 1 MHz
4.5
3.4
2.7
2.5
C
T
pF
6.1
5.2
4.6
3.7
5.3
4.2
3.5
3.1
2.2
Capacitance ratio
V
R
= 1 V,
V
R
= 4 V,
f = 1 MHz
-
1.75
1.55
C
T1
/
C
T4
2.2
Capacitance difference
V
R
= 1 V,
V
R
= 3 V,
f = 1 MHz
C
1V
-
C
3V
1.78
1.4
pF
0.7
C
3V
-
C
4V
0.5
0.3
Capacitance difference
V
R
= 3 V,
V
R
= 4 V,
f = 1 MHz
-
Series resistance
V
R
= 1 V,
f = 1 GHz
r
s
0.37
-
Case capacitance
f = 1 MHz
pF
-
C
C
-
0.09
Series inductance chip to ground
L
s
-
0.6
-
nH
Semiconductor Group
2
1998-11-01
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