BBY 52-02W
Semiconductor Group
Jul-23-1998
1
Silicon Tuning Diode
Preliminary data
High Q hyperband tuning diode
Low series inductance
Designed for low tuning voltage operation
For VCO's in mobile communications equipment
1
VES05991
2
Type
Marking Ordering Code
Pin Configuration
Package
BBY 52-02W
K
Q62702-B0860
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
7
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ...+150
C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group
1
1998-11-01
BBY 52-02W
Semiconductor Group
Jul-23-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 6 V
I
R
-
-
10
nA
Reverse current
V
R
= 6 V,
T
A
= 65 C
I
R
-
-
100
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
V
R
= 4 V,
f = 1 MHz
C
T
1.4
0.95
0.9
0.85
1.85
1.5
1.35
1.15
2.2
2
1.75
1.45
pF
Capacitance ratio
V
R
= 1 V,
V
R
= 4 V,
f = 1 MHz
C
T1
/
C
T4
1.1
1.6
2.1
-
Series resistance
V
R
= 1 V,
f = 1 GHz
r
s
-
0.9
1.7
Case capacitance
f = 1 MHz
C
C
-
0.09
-
pF
Series inductance chip to ground
L
s
-
0.6
-
nH
Semiconductor Group
2
1998-11-01
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