BBY 53-02W
Semiconductor Group
Au -20-1998
1
Silicon Tuning Diode
Preliminary data
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
High ratio at low reverse voltage
1
VES05991
2
Type
Marking
Ordering Code
Pin Configuration
Package
BBY 53-02W
L
Q62702-B0862
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
6
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ...+150
C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group
1
1998-11-01
BBY 53-02W
Semiconductor Group
Au -20-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 4 V
I
R
-
-
10
nA
Reverse current
V
R
= 4 V,
T
A
= 65 C
I
R
-
-
200
AC characteristics
5.3
2.4
5.8
3.1
C
T
4.8
1.85
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
pF
2.2
C
T1
/
C
T3
Capacitance ratio
V
R
= 1 V,
V
R
= 3 V,
f = 1 MHz
2.6
-
1.8
0.37
Series resistance
V
R
= 1 V,
f = 1 GHz
-
r
s
-
0.12
-
Case capacitance
f = 1 MHz
-
C
C
pF
Series inductance chip to ground
nH
L
s
1.8
-
-
Semiconductor Group
2
1998-11-01
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