BB 565
Semiconductor Group
Jul-13-1998
1
Silicon Variable Capacitance Diode
For UHF-TV-tuners
High capacitance ratio
Low series inductance
Low series resistance
Extremely small plastic SMD package
Excellent uniformity and matching due to
"in-line" matching assembly procedure
1
VES05991
2
Type
Marking Ordering Code
Pin Configuration Package
BB 565
BB 565
C
C
Q62702-B0869 unmatched
Q62702-B0873 in-line matched
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage (
R
5k
)
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ...+150
C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group
1
1998-11-01
BB 565
Semiconductor Group
Jul-13-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
-
-
10
nA
Reverse current
V
R
= 30 V,
T
A
= 85 C
I
R
-
-
200
AC characteristics
pF
C
T
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 25 V,
f = 1 MHz
V
R
= 28 V,
f = 1 MHz
20
14.8
2.07
2
21.5
16.4
2.28
2.2
18.5
13.2
1.85
1.8
-
C
T2
/
C
T25
6.3
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f = 1 MHz
7.2
8.1
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
10
11
9
C
T1
/
C
T28
Capacitance matching
1)
V
R
= 1V to 28V ,
f = 1 MHz, 4 diodes sequence
V
R
= 1V to 28V ,
f = 1 MHz, 7 diodes sequence
C
T
/
C
T
-
-
0.5
0.7
1.5
2
%
Series resistance
V
R
= 3 V,
f = 470 MHz
r
s
-
0.6
-
Series inductance
L
s
-
0.6
-
nH
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group
2
1998-11-01
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