BB 689
Semiconductor Group
Mar-11-1998
1
Silicon Tuning Diode
Preliminary data
For VHF 2-Band-hyperband-TV-tuners
Very high capacitance ratio
Low series inductance
Low series resistance
Extremely small plastic SMD package
Excellent uniformity and matching due to
"in-line" matching assembly procedure
1
VES05991
2
Type
Marking Ordering Code
Pin Configuration Package
BB 689
BB 689
E
E
Q62702-B0886 unmached
Q62702-B0890 in-line matched
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Value
Symbol
Unit
V
V
R
30
Diode reverse voltage
Peak reverse voltage (
R
5k
)
35
V
RM
I
F
20
Forward current
mA
Operating temperature range
T
op
- 55 ...+150
C
Storage temperature
T
stg
- 55 ...+150
Semiconductor Group
1
1998-11-01
BB 689
Semiconductor Group
Mar-11-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Values
Symbol
Unit
typ.
max.
min.
DC characteristics
I
R
-
-
nA
Reverse current
V
R
= 30 V
10
I
R
Reverse current
V
R
= 30 V,
T
A
= 85 C
-
-
200
A
AC characteristics
61.5
47.2
3
2.9
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 25 V,
f = 1 MHz
V
R
= 28 V,
f = 1 MHz
pF
C
T
56.5
43.4
2.8
2.7
51
39.6
2.6
2.5
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f = 1 MHz
C
T2
/
C
T25
-
17
15.5
14.5
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
20.9
23.2
18
C
T1
/
C
T28
-
C
T
/
C
T
-
Capacitance ratio
1)
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
%
2
0.85
r
s
-
Series resistance
V
R
= 8 V,
f = 470 MHz
-
Series inductance chip to ground
L
s
-
0.6
-
nH
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group
2
1998-11-01
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