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Электронный компонент: Q62702-B0897

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BB 857
Semiconductor Group
Mar-27-1998
1
Silicon Tuning Diode
For SAT-indoor-units
High capacitance ratio
Low series inductance
Low series resistance
Extremely small plastic SMD package
Excellent uniformity and matching due to
"in-line" matching assembly procedure
1
VES05991
2
Type
Marking Ordering Code
Pin Configuration Package
BB 857
BB 857
O
O
Q62702-B0897 unmatched
Q62702-B0893 inline matched
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage (
R
5k
)
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ...+150
C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group
1
1998-11-01
BB 857
Semiconductor Group
Mar-27-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
-
-
10
nA
Reverse current
V
R
= 30 V,
T
A
= 85 C
I
R
-
-
200
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 25 V,
f = 1 MHz
V
R
= 28 V,
f = 1 MHz
C
T
6
-
0.45
6.6
0.55
0.54
7.2
-
0.65
pF
12
-
Capacitance ratio
V
R
= 1 V,
V
R
= 25 V,
f = 1 MHz
C
T1
/
C
T25
-
-
12.2
-
9.7
C
T1
/
C
T28
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
Capacitance ratio
1)
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
C
T
/
C
T
-
-
5
%
Series resistance
V
R
= 5 V,
f = 470 MHz
r
s
-
1.5
-
Series inductance
L
s
0.6
nH
-
-
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group
2
1998-11-01
BB 857
Semiconductor Group
Mar-27-1998
3
Diode capacitance
C
T
= f (V
R
)
f = 1MHz
10
0
10
1
V
V
R
0
1
2
3
4
5
6
7
8
pF
10
C
T
Semiconductor Group
3
1998-11-01