BB 837
Semiconductor Group
Mar-27-1998
1
Silicon Tuning Diode
Preliminary data
Extented frequency range up to 2.8 GHz
special design for use in TV-sat indoor units
High capacitance ratio
Type
Marking
Ordering Code
Pin Configuration Package
BB 837
M
Q62702-B0904
1=C
2=A
SOD-323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage (R
5k
)
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
55 ...+150
C
Storage temperature
T
stg
55 ...+150
BB 837
Semiconductor Group
Mar-27-1998
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
-
-
10
nA
Reverse current
V
R
= 30 V, T
A
= 85 C
I
R
-
-
200
AC characteristics
pF
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
6
-
0.45
7.2
-
0.65
6.6
0.55
0.54
C
T
C
T1
/C
T25
Capacitance ratio
V
R
= 1 V, V
R
= 25 V, f = 1 MHz
-
12
-
-
C
T1
/C
T28
Capacitance ratio
V
R
= 1V to 28V, f = 1 MHz
9.7
-
12.2
%
Capacitance matching
V
R
= 1V to 28V, f = 1 MHz
-
-
C
T
/C
T
5
Series resistance
V
R
= 1 V, f = 470 MHz
r
s
-
1.5
-
Series inductance
L
s
-
1.4
-
nH
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