BB 644
Semiconductor Group
Jul-09-1998
1
Silicon Variable Capacitance Diode
Preliminary data
For VHF TV-tuners
High capacitance ratio
Low series inductance
Low series resistance
Extremely small plastic SMD package
Excellent uniformity and matching due to
"in-line" matching assembly procedure
Type
Marking Ordering Code
Pin Configuration Package
BB 644
BB 644
yellow 4
yellow 4
Q62702-B0905 group matched
Q62702-B0907 unmatched
1 = C
2 = A
SOD-323
Maximum Ratings
Parameter
Value
Symbol
Unit
Diode reverse voltage
V
30
V
R
Peak reverse voltage (
R
5k
)
35
V
RM
I
F
20
Forward current
mA
Operating temperature range
T
op
-55 ...+150
C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group
1
1998-11-01
BB 644
Semiconductor Group
Jul-09-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
-
-
10
nA
Reverse current
V
R
= 30 V,
T
A
= 85 C
I
R
-
-
100
AC characteristics
44.5
34.2
2.85
2.75
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 25 V,
f = 1 MHz
V
R
= 28 V,
f = 1 MHz
C
T
pF
39
29.4
2.5
2.4
41.8
31.85
27
2.55
12.5
C
T2
/
C
T25
11
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f = 1 MHz
-
11.8
17.5
16.4
15.2
C
T1
/
C
T28
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
2
%
C
T
/
C
T
-
-
Capacitance ratio
1)
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
0.75
-
0.6
r
s
Series resistance
V
R
= 1 V,
f = 1 GHz
-
L
s
1.8
-
Series inductance
nH
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group
2
1998-11-01
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