BB 664
Semiconductor Group
Jul-10-1998
1
Silicon Variable Capacitance Diode
Preliminary data
For VHF TV-tuners
High capacitance ratio
Low series inductance
Low series resistance
Extremely small plastic SMD package
Excellent uniformity and matching due to
"in-line" matching assembly procedure
1
VES05991
2
Type
Marking Ordering Code
Package
Pin Configuration
4
4
Q62702- B0909 (unmatched)
Q62702- B0908 (in-lined matched)
1=C
2=A
SCD-80
BB 664
BB 664
Maximum Ratings
Parameter
Symbol
Unit
Value
Diode reverse voltage
V
R
30
V
Peak reverse voltage (
R
5k
)
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
-55.. ...+125
C
Storage temperature
T
stg
-55... ...+150
Semiconductor Group
1
1998-11-01
BB 664
Semiconductor Group
Jul-10-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
-
-
10
nA
Reverse current
V
R
= 30 V,
T
A
= 85 C
I
R
-
-
100
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 25 V,
f = 1 MHz
V
R
= 28 V,
f = 1 MHz
C
T
39
29.4
2.5
2.4
41.8
31.85
2.7
2.55
44.5
34.2
2.85
2.75
pF
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f = 1 MHz
C
T2
/
C
T25
11
11.8
12.5
-
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
C
T1
/
C
T28
15.2
16.4
17.5
Capacitance ratio
1)
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
C
T
/
C
T
-
-
2
%
Series resistance
V
R
= 5 V,
f = 470 MHz
r
s
-
0.6
0.75
Series inductance
L
s
-
0.6
-
nH
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group
2
1998-11-01
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