BBY 55-02W
Semiconductor Group
Apr-30-1998
1
Silicon Tuning Diode
Preliminary data
Excellent linearity
High Q hyperabrupt tuning diode
Low series inductance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
Very low capacitance spread
1
VES05991
2
Type
Marking Ordering Code
Pin Configuration
Package
BBY 55-02W
7
Q62702-B0913
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
16
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ...+150
C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group
1
1998-11-01
BBY 55-02W
Semiconductor Group
Apr-30-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Unit
Values
min.
max.
typ.
DC characteristics
I
R
-
-
Reverse current
V
R
= 15 V
3
nA
I
R
-
-
100
Reverse current
V
R
= 15 V,
T
A
= 65 C
AC characteristics
Diode capacitance
V
R
= 2 V,
f
= 1 MHz
V
R
= 4 V,
f
= 1 MHz
V
R
= 10 V,
f
= 1 MHz
14
10
5.5
15
11
6
C
T
16
12
6.5
pF
2
-
Capacitance ratio
V
R
= 2 V,
V
R
= 10 V,
f
= 1 MHz
C
T2/
C
T10
2.5
3
-
r
s
0.35
0.15
Series resistance
V
R
= 5 V,
f
= 470 MHz
-
0.09
-
C
C
Case capacitance
f
= 1 MHz
pF
-
0.6
Series inductance
L
s
-
nH
Semiconductor Group
2
1998-11-01
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