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Электронный компонент: Q62702-B195

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Semiconductor Group
1
Silicon Tuning Varactor
BBY 35 F
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BBY 35 F
Q62702-B195
T1
Cathode: black dot,
heat sink
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
22
V
Forward current
I
F
400
Junction temperature
T
j
175
C
mA
Storage temperature range
T
stg
55 ... + 150
Operating temperature range
T
op
55 ... + 150
1)
For detailed information see chapter Package Outlines.
q
Hyperabrupt junction tuning diode
q
Frequency linear tuning range 4 ... 12 V
q
High figure of merit
Semiconductor Group
2
BBY 35 F
BBY 35 F
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
pF
Diode capacitance
V
R1
= 4 V,
f
= 1 MHz
V
R2
= 20 V,
f
= 1 MHz
C
T
8.5
2.1

10
2.4
Capacitance ratio
V
R1
= 4 V,
V
R2
= 20 V
C
T4
C
T20
3.5
Figure of merit
V
R
= 4 V,
f
= 50 MHz
Q
250
350
V
Breakdown voltage
I
R
= 10
A
V
(BR)
22
nA
Reverse current
V
R
= 20 V
I
R
10