ChipFind - документация

Электронный компонент:

Скачать:  PDF   ZIP
Semiconductor Group
1
BB 112
Silicon Variable Capacitance Diode
BB 112
q
For AM tuning applications
q
Specified tuning range
1 ... 8.0 V
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BB 112
Q62702-B240
TO-92
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
12
V
Forward current,
T
A
60 C
I
F
50
mA
Operating temperature range
T
op
55 ... + 85
C
1)
For detailed information see chapter Package Outlines.
07.94
Semiconductor Group
2
BB 112
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
min.
typ.
Unit
Values
max.
Reverse current
V
R
= 10 V
V
R
= 10 V,
T
A
= 60 C
I
R
nA


50
200
Diode capacitance,
f
= 1 MHz
V
R
= 1 V
V
R
= 8 V
C
T
pF
440
17.5
470
520
34
Capacitance ratio
V
R
= 1 V, 8 V
C
T1
C
T8
15
Series resistance
V
R
= 1 V,
f
= 0.5 MHz
r
s
1.4
Q factor
V
R
= 1 V,
f
= 0.5 MHz
Q
480
Temperature coefficient
of diode capacitance
V
R
= 1 V,
f
= 1 MHz
TC
C
ppm/K
500
Capacitance matching
V
R
= 1 ... 8 V
C
T
C
T
%
3
Semiconductor Group
3
BB 112
Diode capacitance
C
T
=
f
(
V
R
)
Capacitance ratio
C
T
/
C
T1V
=
f
(
V
R
)
Capacitance ratio
C
T
/
C
Tref
=
f
(
V
R
)
Temperature coefficient of junction
capacitance
TC
C
=
f
(
V
R
)