Semiconductor Group
1
BB 804
Silicon Variable Capacitance Diode
BB 804
q
For FM tuners
q
Monolithic chip with common cathode
for perfect tracking of both diodes
q
Uniform "square law" characteristics
q
Ideal Hifi tuning device when used
in low-distortion, back-to-back
configuration
Maximum Ratings per Diode
Type
Ordering Code
(tape and reel)
Pin
Configuration
Package
Marking
BB 804
Q62702-B372
SOT-23
SF (see
Characteristics
for marking of
capacitance
subgroups)
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
18
V
Forward current,
T
A
60 C
I
F
50
mA
Operating temperature
T
op
100
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
600
K/W
Peak reverse voltage
V
RM
20
10.94
Semiconductor Group
2
BB 804
Electrical Characteristics per Diode
at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
min.
typ.
Unit
Values
max.
Reverse current
V
R
= 16 V
V
R
= 16 V,
T
A
= 60 C
I
R
nA
20
200
Diode capacitance
V
R
= 2 V
, f
= 1 MHz
C
T
pF
42
47.5
Capacitance ratio
V
R
= 2 V, 8 V,
f
= 1 MHz
C
T2
C
T8
1.65
1.71
Series resistance
V
R
= 2 V
, f
= 100 MHz
r
s
0.18
Diode capacitance
1)
V
R
= 2 V,
f
= 1 MHz
Subgroups: 0
1
2
3
4
C
T
pF
42
43
44
45
46
43.5
44.5
45.5
46.5
47.5
Q factor
V
R
= 2 V
, f
= 100 MHz
Q
200
Temperature coefficient of
diode capacitance
V
R
= 2 V,
f
= 1 MHz
TC
C
ppm/K
330
1)
The capacitance subgroup is marked by the subgroup number printed on the component and the package
label. A packaging unit (e.g. 8-mm tape) contains diodes of one subgroup only. Delivery of different
capacitance subgroups requires a special agreement.
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