Semiconductor Group
1
BB 814
Silicon Variable Capacitance Diode
BB 814
q
For FM radio tuners
with extended frequency band
q
High tuning ratio at low supply voltage
(car radio)
q
Monolithic chip (common cathode)
for perfect dual diode tracking
q
Coded capacitance groups and
group matching available
Maximum Ratings per Diode
Type
Ordering Code
(tape and reel)
Pin Configuration
Package
Marking
BB 814
Q62702-B404
SH (see
Characteristics
for marking of
capacitance
subgroups)
SOT-23
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
18
V
Forward current,
T
A
60 C
I
F
50
mA
Operating temperature range
T
op
55 ... + 125
C
Storage temperature range
T
stg
55 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
600
K/W
Peak reverse voltage
V
RM
20
10.94
Semiconductor Group
2
BB 814
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
min.
typ.
Unit
Values
max.
Reverse current
V
R
= 16 V
V
R
= 16 V,
T
A
= 60 C
I
R
nA
20
200
Diode capacitance
f
= 1 MHz
1)
V
R
=
2 V
V
R
=
8 V
C
T
pF
43
19.1
44.75
20.8
46.5
22.7
Capacitance ratio
V
R
= 2 V, 8 V,
f
= 1 MHz
C
T2
C
T8
2.05
2.15
2.25
Capacitance matching
V
R
= 2 V, 8 V
C
T
C
T
%
3
1)
Capacitance groups, coded 1, 2
Code
C
T (2 V)
C
T (8 V)
1
43
... 45
19.1
... 21.95
2
44.5
... 46.5
19.75 ... 22.7
DC Characteristics
Series resistance
V
R
= 2 V,
f
= 100 MHz
Q factor
V
R
= 2 V,
f
= 100 MHz
r
S
Q
0.18
200
pF
pF
Unit
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