Semiconductor Group
1
BB 811
Silicon Variable Capacitance Diode
BB 811
q
Frequency range up to 2 GHz;
special design for use in TV-sat indoor units
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BB 811
Q62702-B478
white T
SOD-123
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
30
V
Forward current,
T
A
60 C
I
F
20
mA
Operating temperature range
T
op
55 ... + 125
C
Storage temperature range
T
stg
55 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
450
K/W
1)
For detailed information see chapter Package Outlines.
07.94
Semiconductor Group
2
BB 811
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
min.
typ.
Unit
Values
max.
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 C
I
R
nA
20
500
Diode capacitance,
f
= 1 MHz
V
R
=
1 V
V
R
= 28 V
C
T
pF
7.8
0.85
8.8
1.02
9.8
1.2
Capacitance ratio
f
= 1 MHz,
V
R
= 1 V/28 V
C
T1
C
T28
7.8
8.6
9.5
Series resistance
f
= 100 MHz
, C
T
= 9 pF
r
S
1
Capacitance matching
f
= 1 MHz,
V
R
= 0.5 ... 28 V
C
T
C
T
%
3
Case capacitance
f
= 1 MHz
C
C
pF
0.1
Series inductance
L
S
nH
2.8
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz
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