Semiconductor Group
1
BB 419
Silicon Variable Capacitance Diode
BB 419
q
For VHF tuned circuit applications
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BB 419
Q62702-B499
white 2
SOD-123
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
28
V
Forward current,
T
A
60 C
I
F
20
mA
Operating temperature range
T
op
55 ... + 125
C
Storage temperature range
T
stg
55 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
450
K/W
Peak reverse voltage
V
RM
30
1)
For detailed information see chapter Package Outlines.
07.94
BB 419
Semiconductor Group
2
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
min.
typ.
Unit
Values
max.
Reverse current
V
R
= 28 V
V
R
= 28 V,
T
A
= 60 C
I
R
nA
20
200
Diode capacitance,
f
= 1 MHz
V
R
= 3 V
V
R
= 25 V
C
T
pF
26
4.3
32
6
Capacitance matching
V
R
= 3 V
...
25 V
C
T
/
C
T
3
Figure of merit
f
= 50 MHz,
V
R
= 3 V
f
= 200 MHz,
V
R
= 25 V
Q
280
600
Capacitance ratio
f
= 1 MHz,
V
R
= 3 V, 25 V
C
T3
/ C
T25
5
6.5
%
Series resistance
f
= 100 MHz,
C
T
= 12 pF
r
s
0.35
0.5
Diode capacitance
C
T
=
f
(
V
R
)
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