Semiconductor Group
1
BB 619
Silicon Variable Capacitance Diode
BB 619
q
For tuning of extended frequency bands
in VHF TV/VTR tuners
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
Pin Configuration
1
2
BB 619
Q62702-B570
yellow S
SOD-123
C
A
V
RM
Reverse voltage (
R
5 k
)
35
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
30
V
Forward current
I
F
20
mA
Operating temperature range
T
op
55 ... + 150
C
Storage temperature range
T
stg
55 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
450
K/W
10.94
Semiconductor Group
2
BB 619
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz
Parameter
Symbol
min.
typ.
Unit
Values
max.
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 C
I
R
nA
10
200
Diode capacitance
, f
= 1 MHz
V
R
= 1 V
V
R
= 28 V
C
T
pF
36
2.4
38.7
2.6
42
2.9
Capacitance matching
V
R
= 1 V ... 28 V;
f
= 1 MHz
C
T
C
T
%
2.5
Capacitance ratio
V
R
= 1 V
,
28 V;
f
= 1 MHz
C
T1
C
T28
13.5
14.9
Series inductance
L
s
nH
2
Series resistance
C
T
= 12 pF,
f
= 100 MHz
r
s
0.6
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