Semiconductor Group
1
Jan-08-1997
BB 535
Silicon Variable Capacitance Diode
For UHF and TV/TR tuners
Large capacitance ratio, low series resistance
Type
Marking Ordering Code
Pin Configuration
Package
BB 535
white S
Q62702-B580
1 = C
2 = A
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage (
R
5k
)
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
- 55 ... + 125
C
Storage temperature
T
stg
- 55 ... + 150
Thermal Resistance
Junction - ambient
R
thJA
450
K/W
Semiconductor Group
2
Jan-08-1997
BB 535
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 30 V,
T
A
= 25 C
V
R
= 30 V,
T
A
= 85 C
I
R
-
-
-
-
200
10
nA
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 25 V,
f = 1 MHz
V
R
= 28 V,
f = 1 MHz
C
T
1.9
2.05
14.01
17.5
2.1
2.24
15
18.7
2.3
2.4
16.1
20
pF
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f = 1 MHz
C
T2
/
C
T25
6
6.7
7.5
-
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
C
T1
/
C
T28
8.2
8.9
9.8
Capacitance matching
V
R
= 1 ... 28 V,
f = 1 MHz
C
T
/
C
T
-
-
2.5
%
Series resistance
V
R
= 3 V,
f = 470 MHz
r
s
-
0.55
0.65
Series inductance
L
s
-
2
-
nH
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