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Электронный компонент: Q62702-B583

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Semiconductor Group
1
Jan-31-1997
BB 545
Silicon Tuning Diode
Preliminary data
For tuning UHF and VHF TV Tuners
Large capacitance ratio, low series resistance
Type
Marking Ordering Code
Pin Configuration
Package
BB 545
white U
Q62702-B583
1 = K
2 = A
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
30
V
Forward current
I
F
20
mA
Operating temperature range
T
op
- 55 ... + 150
C
Storage temperature
T
stg
- 55 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
450
K/W
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
2
Jan-31-1997
BB 545
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 30 V,
T
A
= 25 C
V
R
= 30 V,
T
A
= 85 C
I
R
-
-
-
-
200
10
nA
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 25 V,
f = 1 MHz
V
R
= 28 V,
f = 1 MHz
C
T
1.8
1.85
13.2
18.5
2
2.07
14.8
20
2.2
2.28
16.4
21.5
pF
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f = 1 MHz
C
T2
/
C
T25
6.3
7.2
8.1
-
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
C
T1
/
C
T28
9
10
11
Capacitance matching
1)
V
R
= 1 ... 28 V,
f = 1 MHz
C
T
/
C
T
-
-
2.5
%
Series resistance
V
R
= 3 V,
f = 470 MHz
r
s
-
0.6
-
Series inductance
L
s
-
2
-
nH
Semiconductor Group
3
Jan-31-1997
BB 545
Diode capacitance
C
T
= f (V
R
)
f = 1MHz
0
5
10
15
20
V
30
V
R
0
2
4
6
8
10
12
14
16
18
pF
22
C
T
Temperature coefficient of the diode
capacitance
T
Cc
=
f (V
R
)
f = 1MHz
10
0
10
1
V
V
R
-5
10
-4
10
-3
10
-2
10
-1
10
1/C
T
Cc
Reverse current
I
R
=
f (V
R
)
T
A
= Parameter
10
0
10
1
V
V
R
-1
10
0
10
1
10
2
10
3
10
4
10
pA
I
R
25C
85C
Reverse current
I
R
=
f (T
A
)
V
R
= 28V
-30
-10
10
30
50
70
C
100
T
A
1
10
2
10
3
10
4
10
pA
I
R