Semiconductor Group
1
BB 640
Silicon Variable Capacitance Diode
BB 640
q
For Hyperband TV/VTR tuners, Bd I
Maximum Ratings
Type
Ordering Code
Pin Configuration Marking
Package
(tape and reel)
1
2
BB 640
Q62702-B589
C
A
red S
SOD-323
V
RM
Reverse voltage (
R
5 k
)
35
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
30
V
Forward current
I
F
20
mA
Operating temperature range
T
op
55 ... + 150
C
Storage temperature range
T
stg
55 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
450
K/W
02.96
Semiconductor Group
2
BB 640
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz
Parameter
Symbol
min.
typ.
Unit
Values
max.
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 C
I
R
nA
10
200
Diode capacitance,
f
= 1 MHz
V
R
= 1 V
V
R
= 28 V
C
T
pF
62
2.9
76
3.4
Capacitance ratio
V
R
= 1 V, 28 V,
f
= 1 MHz
C
T1
C
T28
19.5
25
Capacitance matching
V
R
= 1 V ... 28 V,
f
= 1 MHz
C
T
C
T
%
2.5
Series resistance
C
T
= 30 pF,
f
= 100 MHz
r
s
1.15
Series inductance
L
S
nH
2
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