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Электронный компонент: Q62702-B628

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Semiconductor Group
1
04.96
Silicon Tuning Diode
BB 833
Features
q
Extented frequency range up to 2.5 GHz;
special design for use in TV-SAT indoor units
q
High capacitance ratio
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
Pin Configuration
1
2
BB 833
Q62702-B628
white X
SOD-323
C
A
V
RM
Reverse voltage (
R
5 k
)
35
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
30
V
Forward current
I
F
20
mA
Operating temperature range
T
op
55 ... + 150
C
Storage temperature range
T
stg
55 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
450
K/W
BB 833
Semiconductor Group
2
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz
Parameter
Symbol
min.
typ.
Unit
Values
max.
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 C
I
R
nA


20
500
Diode capacitance
f
= 1 MHz
,V
R
= 1 V
V
R
= 28 V
C
T
pF
8.5
0.6
9.3
0.75
10
0.9
Capacitance matching
f
= 1 MHz
, V
R
= 1 V ... 28 V
C
T
C
T
%
3
Capacitance ratio
f
= 1 MHz
, V
R
= 1 V
,
28 V
C
T1
C
T28
11
12.4
Series inductance
L
s
nH
Series resistance
C
T
= 9 pF,
f
= 470 MHz
r
s
1.8