BBY 51-03W
Semiconductor Group
1
Edition A01, 03.05.95
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1 2
Package
1)
BBY 51-03W
H
Q62702-B663
C1
A2
SOD-323
Maximum Ratings
Parameter
Symbol
BBY 51-03W
Unit
Reverse voltage
V
R
7
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 +150C
C
Storage temperature range
T
stg
-55...+150C
C
______________________________
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon Tuning Diode
l
High Q hyperabrupt tuning diode
l
Designed for low tuning voltage operation
l
For VCO's in mobile communications equipment
BBY 51-03W
Semiconductor Group
2
Edition A01, 03.05.95
Electrical Characteristics
at
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 6 V
V
R
= 6 V,
T
A
= 65 C
I
R
-
-
-
-
10
200
nA
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
V
R
= 4 V,
f = 1 MHz
C
T
4.5
3.4
2.7
2.5
5.3
4.2
3.5
3.1
6.1
5.2
4.6
3.7
pF
Capacitance ratio
V
R
= 1 V, 4 V,
f = 1 MHz
C
T1V
/
C
T4V
1.55
1.75
2.2
-
Capacitance difference
V
R
= 1 V, 3 V,
f = 1MHz
V
R
= 3 V, 4 V,
f = 1MHz
C
1
V
-
C
3V
C
3V
-
C
4V
1.4
0.30
1.78
0.50
2.2
0.7
pF
Series resistance
V
R
= 1 V,
f = 1 GHz
r
s
-
0.37
-
Case capacitance
f = 1 MHz
C
C
-
0.12
-
pF
Serien inductance
L
s
-
2
-
nH
____________________
1) Without 100 % test, correlation limits
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