Semiconductor Group
1
Feb-04-1997
BBY 52-03W
Silicon Tuning Diode
High Q hyperabrupt dual tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment
Type
Marking
Ordering Code
Pin Configuration
Package
BBY 52-03W
I (white)
Q62702-
1 = C
2 = A
-
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
7
V
Forward current
I
F
20
mA
Operating temperature range
T
op
- 55 ... + 150
C
Storage temperature
T
stg
- 55 ... + 150
Q62702-B664
Semiconductor Group
2
Feb-04-1997
BBY 52-03W
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 6 V,
T
A
= 25 C
V
R
= 6 V,
T
A
= 65 C
I
R
-
-
-
-
200
10
nA
AC characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 2 V,
f
= 1 MHz
V
R
= 3 V,
f
= 1 MHz
V
R
= 4 V,
f
= 1 MHz
C
T
0.85
-
-
1.4
1.15
1.35
1.5
1.85
1.45
-
-
2.2
pF
Capacitance ratio
V
R
= 1 V,
V
R
= 4 V,
f
= 1 MHz
C
T1
/
C
T4
1.1
1.6
2.1
-
Series resistance
V
R
= 1 V,
f
= 1 GHz
r
s
-
0.9
1.8
Case capacitance
f
= 1 MHz
C
C
-
0.12
-
pF
Series inductance chip to ground
L
s
-
1.8
-
nH
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