Semiconductor Group
1
Oct-10-1996
BB 914
Silicon Variable Capacitance Diode
For FM radio tuner with extended frequency band
High tuning ratio low supply voltage (car radio)
Monolitic chip (common cathode) for perfect
dual diode tracking
Good linearity of C-V curve
High figure of merit
Type
Marking Ordering Code
Pin Configuration
Package
BB 914
SMs
Q62702-B673
1 = A1
2 = A2
3=C1/2
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
18
V
Peak reverse voltage
V
RM
20
Forward current,
T
A
60C
I
F
50
mA
Operating temperature range
T
op
- 55 ... + 125
C
Storage temperature
T
stg
- 55 ... + 150
Thermal Resistance
Junction - ambient
R
thJA
600
K/W
Semiconductor Group
2
Oct-10-1996
BB 914
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 16 V,
T
A
= 25 C
V
R
= 16 V,
T
A
= 60 C
I
R
-
-
-
-
200
20
nA
AC characteristics
Diode capacitance
V
R
= 2 V,
f = 1 MHz
V
R
= 8 V,
f = 1 MHz
C
T
17.6
42.5
18.7
43.75
19.75
45
pF
Capacitance ratio
V
R
= 2 V,
V
R
= 8 V,
f = 1 MHz
C
T2
/
C
T8
2.28
2.34
2.42
-
Capacitance matching 2)
V
R
= 2 V,
V
R
= 8 V,
f = 1 MHz
C
T
/
C
T
-
-
1.5
%
Series resistance
C
T
= 38 pF,
f = 100 MHz
r
s
-
0.28
-
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