Semiconductor Group
1
Jan-08-1997
BB 619C
Silicon Variable Capacitance Diode
For tuning of extended frequency band
in VHF TV/ VTR tuners
Type
Marking Ordering Code
Pin Configuration
Package
BB 619C
yellow S
Q62702-B683
1 = C
2 = A
SOD-123
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage (
R
5k
)
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
- 55 ... + 125
C
Storage temperature
T
stg
- 55 ... + 150
Thermal Resistance
Junction - ambient
R
thJA
450
K/W
Semiconductor Group
2
Jan-08-1997
BB 619C
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 30 V,
T
A
= 25 C
V
R
= 30 V,
T
A
= 85 C
I
R
-
-
-
-
200
10
nA
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 25 V,
f = 1 MHz
V
R
= 28 V,
f = 1 MHz
C
T
2.4
2.5
27
36
2.55
2.72
30.2
39
2.8
3.05
33.2
42
pF
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f = 1 MHz
C
T2
/
C
T25
9.5
11.1
-
-
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
C
T1
/
C
T28
13.5
15.3
-
Capacitance matching
V
R
= 28 V,
f = 1 MHz
C
T
/
C
T
-
-
2.5
%
Series resistance
V
R
= 5 V,
f = 470 MHz
r
s
-
0.6
-
Series inductance
L
s
-
2.5
-
nH
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