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Электронный компонент: Q62702-B695

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BB 639C
Semiconductor Group
Apr-30-1998
1
Silicon Variable Capacitance Diode
For tuning of extended frequency band
in VHF TV / VTR tuners
Type
Marking Ordering Code
Pin Configuration Package
BB 639C
yellow S Q62702-B695
1 = C
2 = A
SOD-323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Peak reverse voltage (
R
5k
)
V
RM
35
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ...+125
C
Storage temperature
T
stg
-55 ...+150
BB 639C
Semiconductor Group
Apr-30-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
-
-
10
nA
Reverse current
V
R
= 30 V,
T
A
= 85 C
I
R
-
-
200
AC characteristics
pF
C
T
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 25 V,
f = 1 MHz
V
R
= 28 V,
f = 1 MHz
39
30.2
2.72
2.55
42
33.2
3.05
2.8
36
27
2.5
2.4
-
C
T2
/
C
T25
9.5
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f = 1 MHz
11.1
-
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
15.3
-
13.5
C
T1
/
C
T28
-
2.5
C
T
/
C
T
-
Capacitance matching
V
R
= 1 V,
V
R
= 28 V,
f = 1 MHz
%
Series resistance
V
R
= 5 V,
f = 470 MHz
r
s
-
0.6
0.75
Series inductance
L
s
-
1.8
-
nH
1) In-line matching. For details please refer to Application Note 047
BB 639C
Semiconductor Group
Apr-30-1998
3
Diode capacitance
C
T
= f (V
R
)
f = 1MHz
0
5
10
15
20
V
30
V
R
0
5
10
15
20
25
30
pF
40
C
T
Temperature coefficient of the diode
capacitance
T
Cc
=
f (V
R
)
10
0
10
1
V
V
R
-5
10
-4
10
-3
10
1/C
T
Cc
Reverse current
I
R
=
f (T
A
)
V
R
= 28V
-30
-10
10
30
50
70
C
100
T
A
0
10
1
10
2
10
3
10
pA
I
R
Reverse current
I
R
=
f (V
R
)
T
A
= Parameter
10
0
10
1
V
V
R
-1
10
0
10
1
10
2
10
3
10
pA
I
R
25C
85C