Semiconductor Group
1
04.96
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
Package
1
2
BB 835
yellow X
Q62702-B802
C
A
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
30
V
Reverse voltage (
R
5 k
)
V
RM
35
V
Forward current
I
F
20
mA
Operating temperature range
T
OP
55... +150
C
Storage temperature range
T
stg
55... +150
C
Thermal Resistance
Junction - ambient
1)
R
th JA
450
K/W
1)
For detailed informatioon see chapter Package Outline
Silicon Tuning Diode
Preliminary data
BB 835
Features
q
Extended frequency range up to 2.8 Ghz ;
special design for use in TV-sat indoor units
q
High capacitance ratio
BB 835
Semiconductor Group
2
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz.
Electrical Characteristics
at
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85
C
I
R
10
200
nA
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
8.5
0.5
9.1
0.62
10
0.75
pF
Capacitance ratio
V
R
= 1 V, 28 V, f = 1 MHz
C
T1
/C
T28
13.5
14.7
Capacitance matching
V
R
= 1...28 V, f = 1 MHz
C
T
/C
T
3
%
Series resistance
V
R
= 1 V, f = 470 MHz
r
S
2.4
Series inductance
L
S
1.4
nH
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