Semiconductor Group
1
Feb-04-1997
BBY 53
Silicon Tuning Diode
Preliminary data
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
High ratio at low reverse voltage
Type
Marking Ordering Code
Pin Configuration
Package
BBY 53
S7s
Q62702-B824
1 = A1
2 = A2
3 = C1/C2 SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
6
V
Forward current
I
F
20
mA
Operating temperature range
T
op
- 55 ... + 150
C
Storage temperature
T
stg
- 55 ... + 150
Semiconductor Group
2
Feb-04-1997
BBY 53
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 4 V,
T
A
= 25 C
V
R
= 4 V,
T
A
= 65 C
I
R
-
-
-
-
200
10
nA
AC characteristics
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
C
T
1.85
4.8
2.4
5.3
3.1
5.8
pF
Capacitance ratio
V
R
= 1 V,
V
R
= 3 V,
f = 1 MHz
C
T1
/
C
T3
1.8
2.2
2.6
-
Series resistance
V
R
= 1 V,
f = 1 GHz
r
s
-
0.37
-
Case capacitance
f = 1 MHz
C
C
-
0.12
-
pF
Series inductance chip to ground
L
s
-
2
-
nH
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