BBY 57-02W
Semiconductor Group
Jul-30-1998
1
Silicon Tuning Diode
Preliminary data
Excellent linearity
High Q hyperabrupt tuning diode
Low series inductance
High capacitance ratio
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For control elements such as TCXOs and VCXOs
1
VES05991
2
Type
Marking
Ordering Code
Pin Configuration
Package
BBY 57-02W
5
Q62702-B915
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
10
V
mA
Forward current
20
I
F
Operating temperature range
T
op
-55 ...+150
C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group
1
1998-11-01
BBY 57-02W
Semiconductor Group
Jul-30-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 8 V
I
R
-
-
1
nA
Reverse current
V
R
= 8 V,
T
A
= 65 C
I
R
-
-
100
AC characteristics
pF
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2.5 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
V
R
= 4 V,
f = 1 MHz
16.5
-
-
4
18.6
-
-
5.5
17.5
8.7
7.1
4.73
C
T
Capacitance ratio
V
R
= 1 V,
V
R
= 3 V,
f = 1 MHz
C
T1
/
C
T3
2.45
-
-
-
Capacitance ratio
V
R
= 1 V,
V
R
= 4 V,
f = 1 MHz
C
T1
/
C
T4
3.7
4.5
3
Series resistance
V
R
= 1 V,
f = 470 MHz
-
r
s
-
0.3
Case capacitance
f = 1 MHz
0.09
pF
-
-
C
C
nH
Series inductance chip to ground
L
s
-
0.6
-
Semiconductor Group
2
1998-11-01
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