BBY 58-02W
Semiconductor Group
Jul-30-1998
1
Silicon Tuning Diode
Preliminary data
Excellent linearity
High Q hyperabrupt tuning diode
Low series inductance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For low frequency control elements
such as TCXOs and VCXOs
Very low capacitance spread
1
VES05991
2
Type
Marking
Ordering Code
Pin Configuration
Package
BBY 58-02W
8
Q62702-B916
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
10
V
mA
Forward current
20
I
F
Operating temperature range
T
op
-55 ...+150
C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group
1
1998-11-01
BBY 58-02W
Semiconductor Group
Jul-30-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 8 V
I
R
-
-
1
nA
Reverse current
V
R
= 8 V,
T
A
= 65 C
I
R
-
-
100
AC characteristics
pF
Diode capacitance
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 3 V,
f = 1 MHz
V
R
= 4 V,
f = 1 MHz
17.5
-
-
5.5
19.3
-
-
6.6
18.3
12.35
8.6
6
C
T
Capacitance ratio
V
R
= 1 V,
V
R
= 3 V,
f = 1 MHz
C
T1
/
C
T3
2.15
-
-
-
Capacitance ratio
V
R
= 1 V,
V
R
= 4 V,
f = 1 MHz
C
T1
/
C
T4
3.05
3.3
2.8
Series resistance
V
R
= 1 V,
f = 470 MHz
-
r
s
-
0.25
Case capacitance
f = 1 MHz
0.09
pF
-
-
C
C
nH
Series inductance chip to ground
L
s
-
0.6
-
Semiconductor Group
2
1998-11-01
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