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Электронный компонент: Q62702-C1138

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Semiconductor Group
1
BC 617
BC 618
NPN Silicon Darlington Transistors
BC 617
BC 618
5.91
Maximum Ratings
Type
Marking
Package
1)
Pin Configuration
BC 617
BC 618
Q62702-C1137
Q62702-C1138
TO-92
1
2
3
Ordering Code
C
B
E
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm
25 mm
0.5 mm.
Parameter
Symbol
BC 617
Unit
Collector-emitter voltage
V
CE0
40
V
Collector-base voltage
V
CB0
50
Emitter-base voltage
V
EB0
Collector current
I
C
mA
Base current
I
B
Total power dissipation,
T
C
= 66 C
P
tot
mW
Junction temperature
T
j
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
200
K/W
Peak collector current
I
CM
Junction - case
2)
R
th JC
135
Peak base current
I
BM
BC 618
55
80
12
500
100
625
150
800
200
Values
q
High current gain
q
High collector current
1
2
3
Semiconductor Group
2
BC 617
BC 618
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
I
C
= 100
A;
V
CE
= 5 V
BC 617
BC 618
I
C
= 10 mA;
V
CE
= 5 V
1)
BC 617
BC 618
I
C
= 200 mA;
V
CE
= 5 V
1)
BC 617
BC 618
I
C
= 1000 mA;
V
CE
= 5 V
1)
BC 617
BC 618
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 617
BC 618
V
(BR)CE0
40
55


nA
nA
A
A
Collector cutoff current
V
CB
= 40 V
BC 617
V
CB
= 60 V
BC 618
V
CB
= 40 V,
T
A
= 150 C
BC 617
V
CB
= 60 V,
T
A
= 150 C
BC 618
I
CB0






100
100
10
10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 100
A
BC 617
BC 618
V
(BR)CB0
50
80


Emitter-base breakdown voltage
I
E
= 10
A
V
(BR)EB0
12
V
Collector-emitter saturation voltage
1)
I
C
= 200 mA;
I
B
= 0.2 mA
V
CEsat
1.1
h
FE
4000
2000
10000
4000
20000
10000
10000
4000











70000
50000

Base-emitter saturation voltage
1)
I
C
= 200 mA;
I
B
= 0.2 mA
V
BEsat
1.6
nA
Emitter cutoff current
V
EB
= 4 V
I
EB0
100
1)
Pulse test:
t
300
s,
D
2 %.
Semiconductor Group
3
BC 617
BC 618
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
150
Unit
Values
Parameter
Symbol
min.
typ.
max.
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
3.5
Total power dissipation
P
tot
=
f
(
T
A
;
T
C
)
Collector cutoff current
I
CB0
=
f
(
T
A
)
V
CB
= 40 V
,
60 V
Semiconductor Group
4
BC 617
BC 618
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5 V
, f
= 20 MHz
Base-emitter saturation voltage
V
BEsat
=
f
(
I
C
)
h
FE
= 1000, parameter =
T
A
Permissible pulse load
R
thJA
=
f
(
t
p
)
Collector-emitter saturation voltage
V
CEsat
=
f
(
I
C
)
h
FE
= 1000, parameter =
T
A
Semiconductor Group
5
BC 617
BC 618
DC current gain
h
FE
=
f
(
I
C
)
Capacitance
C
=
f
(
V
EB,
V
CB
)