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Электронный компонент: Q62702-C1632

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Semiconductor Group
1
NPN Silicon AF Transistors
BCW 65
BCW 66
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BCW 65 A
BCW 65 B
BCW 65 C
BCW 66 F
BCW 66 G
BCW 66 H
Q62702-C1516
Q62702-C1612
Q62702-C1479
Q62702-C1892
Q62702-C1526
Q62702-C1632
EAs
EBs
ECs
EFs
EGs
EHs
SOT-23
B
E
C
1
2
3
1)
For detailed information see chapter Package Outlines.
q
For general AF applications
q
High current gain
q
Low collector-emitter saturation voltage
q
Complementary types: BCW 67, BCW 68 (PNP)
5.91
BCW 65
BCW 66
Semiconductor Group
2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
Peak collector current
I
CM
A
Collector current
I
C
mA
Junction temperature
T
j
C
Total power dissipation,
T
S
= 79 C
P
tot
mW
Storage temperature range
T
stg
Collector-base voltage
V
CB0
Thermal Resistance
Junction - ambient
1)
R
th JA
285
K/W
800
1
330
150
65 ... + 150
Emitter-base voltage
V
EB0
Base current
I
B
mA
100
32
45
60
75
BCW 65
BCW 66
Peak base current
I
BM
200
5
5
Junction - soldering point
R
th JS
215
1)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
BCW 65
BCW 66
Semiconductor Group
3
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BCW 65
BCW 66
V
(BR)CE0
32
45


nA
nA
A
A
Collector cutoff current
V
CB
= 32 V
BCW 65
V
CB
= 45 V
BCW 66
V
CB
= 32 V,
T
A
= 150 C
BCW 65
V
CB
= 45 V,
T
A
= 150 C
BCW 66
I
CB0






20
20
20
20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
A
BCW 65
BCW 66
V
(BR)CB0
60
75


Emitter-base breakdown voltage,
I
E
= 10
A
V
(BR)EB0
5
DC current gain
1)
I
C
= 100
A,
V
CE
= 10 V
BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H
I
C
= 10 mA,
V
CE
= 1 V
BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H
I
C
= 100 mA,
V
CE
= 1 V
BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H
I
C
= 500 mA,
V
CE
= 2 V
BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H
h
FE
35
50
80
75
110
180
100
160
250
35
60
100




160
250
350






250
400
630


nA
Emitter-base cutoff current,
V
EB
= 4 V
I
EB0
20
1)
Pulse test:
t
300
s,
D
= 2 %.
BCW 65
BCW 66
Semiconductor Group
4
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 10 mA
I
C
= 500 mA,
I
B
= 50 mA
V
CEsat


0.3
0.7
Base-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 10 mA
I
C
= 500 mA,
I
B
= 50 mA
V
BEsat


1.25
2
DC characteristics
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
170
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
6
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
ibo
60
Unit
Values
Parameter
Symbol
min.
typ.
max.
1)
Pulse test:
t
300
s,
D
= 2 %.
BCW 65
BCW 66
Semiconductor Group
5
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5 V
Collector cutoff current
I
CB0
=
f
(
T
A
)
V
CB
=
V
CEmax