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Электронный компонент: Q62702-C1712

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Semiconductor Group
1
04.96
Features
q
For AF input stages and driver applications
q
High current gain
q
Low collector-emitter saturation voltage
q
Low noise between 30 Hz and 15 kHz
q
Complementary types: BC 856, BC 857,
BC 859, BC 860 (PNP)
Type
Marking
Package
1)
Pin Configuration
BC 846 A
BC 846 B
BC 847 A
BC 847 B
BC 847 C
BC 848 A
BC 848 B
BC 848 C
BC 849 B
BC 849 C
BC 850 B
BC 850 C
Q62702-C1772
Q62702-C1746
Q62702-C1884
Q62702-C1687
Q62702-C1715
Q62702-C1741
Q62702-C1704
Q62702-C1506
Q62702-C1727
Q62702-C1713
Q62702-C1885
Q62702-C1712
1As
1Bs
1Es
1Fs
1Gs
1Js
1Ks
1Ls
2Bs
2Cs
2Fs
2Gs
SOT-23
1
2
3
Ordering Code
(tape and reel)
B
E
C
1)
For detailed information see chapter Package Outlines.
NPN Silicon AF Transistors
BC 846 ... BC 850
BC 846 ... BC 850
Semiconductor Group
2
Maximum Ratings
Parameter
Symbol
BC 846
Unit
Collector-emitter voltage
V
CE0
65
V
Collector-base voltage
V
CB0
80
Emitter-base voltage
V
EB0
Collector current
I
C
mA
Peak emitter current
I
EM
Total power dissipation,
T
S
= 71 C
P
tot
mW
Junction temperature
T
j
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
1)
R
th JA
310
K/W
Peak collector current
I
CM
Peak base current
I
BM
BC 847
BC 850
45
50
100
200
330
150
200
200
Values
BC 848
BC 849
30
30
Collector-emitter voltage
V
CES
80
50
30
6
6
5
Junction - soldering point
R
th JS
240
1)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
BC 846 ... BC 850
Semiconductor Group
3
Electrical Characteristics
1)
Pulse test:
t
300
s,
D
= 2 %.
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 846
BC 847, BC 850
BC 848, BC 849
V
(BR)CE0
65
45
30




nA
A
Collector cutoff current
V
CB
= 30 V
V
CB
= 30 V,
T
A
= 150 C
I
CB0


15
5
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
A
BC 846
BC 847, BC 850
BC 848, BC 849
V
(BR)CB0
80
50
30




Emitter-base breakdown voltage
I
E
= 1
A
BC 846, BC 847
BC 848, BC 849, BC 850
V
(BR)EB0
6
5


mV
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
CEsat

90
200
250
600
DC current gain
I
C
= 10
A,
V
CE
= 5 V
BC 846 A, BC 847 A, BC 848 A
BC 846 B ... BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
I
C
= 2 mA,
V
CE
= 5 V
BC 846 A, BC 847 A, BC 848 A
BC 846 B ... BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
h
FE


110
200
420
140
250
480
180
290
520


220
450
800
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
BEsat

700
900

Collector-emitter breakdown voltage
I
C
= 10
A,
V
BE
= 0
BC 846
BC 847, BC 850
BC 848, BC 849
V
(BR)CES
80
50
30




Base-emitter voltage
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
V
BE(on)
580
660
700
770
at
T
A
= 25 C, unless otherwise specified.
BC 846 ... BC 850
Semiconductor Group
4
Electrical Characteristics
Unit
Values
Parameter
Symbol
min.
typ.
max.
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
250
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
3
Input capacitance
V
CB
= 0.5 V,
f
= 1 MHz
C
ibo
8
k
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 846 A ... BC 848 A
BC 846 B ... BC 850 B
BC 847 C ... BC 850 C
h
11e


2.7
4.5
8.7


dB
Noise figure
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 k
f
= 30 Hz ... 15 kHz
BC 849
BC 850
f
= 1 kHz,
f
= 200 Hz
BC 849
BC 850
F



1.4
1.4
1.2
1.0
4
3
4
4
10
4
Open-circuit reverse voltage transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 846 A ... BC 848 A
BC 846 B ... BC 850 B
BC 847 C ... BC 850 C
h
12e


1.5
2.0
3.0


Short-circuit forward current transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 846 A ... BC 848 A
BC 846 B ... BC 850 B
BC 847 C ... BC 850 C
h
21e


200
330
600


S
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 846 A ... BC 848 A
BC 846 B ... BC 850 B
BC 847 C ... BC 850 C
h
22e


18
30
60


V
Equivalent noise voltage
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 k
f
= 10 Hz ... 50 Hz
BC 850
V
n
0.135
at
T
A
= 25 C, unless otherwise specified.
BC 846 ... BC 850
Semiconductor Group
5
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Collector-base capacitance
C
CB0
=
f
(
V
CB0
)
Emitter-base capacitance
C
EB0
=
f
(
V
EB0
)
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5 V