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Semiconductor Group
1
04.96
NPN Silicon AF Transistors
BCX 54 ... BCX 56
Features
q
For AF driver and output stages
q
High collector current
q
Low collector-emitter saturation voltage
q
Complementary types: BCX 51 ... BCX 53 (PNP)
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BCX 54
BCX 54-10
BCX 54-16
BCX 55
BCX 55-10
BCX 55-16
BCX 56
BCX 56-10
BCX 56-16
Q62702-C954
Q62702-C1861
Q62702-C1731
Q62702-C1729
Q62702-C1730
Q62702-C1903
Q62702-C1614
Q62702-C1635
Q62702-C1613
BA
BC
BD
BE
BG
BM
BH
BK
BL
SOT-89
1
2
3
B
C
E
1)
For detailed information see chapter Package Outlines.
BCX 54 ... BCX 56
Semiconductor Group
2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
Peak collector current
I
CM
Collector current
I
C
A
Junction temperature
T
j
C
Total power dissipation,
T
S
= 130 C
P
tot
W
Storage temperature range
T
stg
Collector-base voltage
V
CB0
Thermal Resistance
Junction - ambient
1)
R
th JA
75
K/W
1
1.5
1
150
65 ... + 150
Emitter-base voltage
V
EB0
Base current
I
B
mA
100
45
60
45
60
BCX 54
BCX 55
Peak base current
I
BM
200
5
5
80
100
BCX 56
5
Junction - soldering point
R
th JS
20
1)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
BCX 54 ... BCX 56
Semiconductor Group
3
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
1)
I
C
= 5 mA,
V
CE
= 2 V
I
C
= 150 mA,
V
CE
= 2 V
BCX 54, BCX 55, BCX 56
BCX 54-10, BCX 55-10, BCX 56-10
BCX 54-16, BCX 55-16, BCX 56-16
I
C
= 500 mA,
V
CE
= 2 V
h
FE
25
40
63
100
25

100
160
250
160
250
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BCX 54
BCX 55
BCX 56
V
(BR)CE0
45
60
80




nA
A
Collector cutoff current
V
CB
= 30 V
V
CB
= 30 V,
T
A
= 150 C
I
CB0


100
20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 100
A
BCX 54
BCX 55
BCX 56
V
(BR)CB0
45
60
100




Emitter-base breakdown voltage
I
E
= 10
A
V
(BR)EB0
5
V
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
V
CEsat
0.5
Base-emitter voltage
1)
I
C
= 500 mA,
V
CE
= 2 V
V
BE
1
nA
Emitter cutoff current
V
EB
= 4 V
I
EB0
20
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 20 MHz
f
T
100
AC characteristics
1)
Pulse test:
t
300
s,
D
= 2 %.
BCX 54 ... BCX 56
Semiconductor Group
4
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 10 V
Collector cutoff current
I
CB0
=
f
(
T
A
)
V
CB
= 30 V
BCX 54 ... BCX 56
Semiconductor Group
5
Collector current
I
C
=
f
(
V
BE
)
V
CE
= 2 V
Base-emitter saturation voltage
I
C
=
f
(
V
BEsat
)
h
FE
= 10
Collector-emitter saturation voltage
I
C
=
f
(
V
CEsat
)
h
FE
= 10
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 2 V