Semiconductor Group
1
NPN Silicon AF Transistors
BCP 54
... BCP 56
5.91
Type
Marking
Package
1)
Pin Configuration
BCP 54
BCP 54-10
BCP 54-16
BCP 55
BCP 55-10
BCP 55-16
BCP 56
BCP 56-10
BCP 56-16
Q62702-C2117
Q62702-C2119
Q62702-C2120
Q62702-C2148
Q62702-C2122
Q62702-C2123
Q62702-C2149
Q62702-C2125
Q62702-C2106
BCP 54
BCP 54-10
BCP 54-16
BCP 55
BCP 55-10
BCP 55-16
BCP 56
BCP 56-10
BCP 56-16
SOT-223
1
2
3
Ordering Code
(tape and reel)
4
B
C
E
C
1)
For detailed information see chapter Package Outlines.
q
For AF driver and output stages
q
High collector current
q
Low collector-emitter saturation voltage
q
Complementary types: BCP 51 ... BCP 53 (PNP)
Semiconductor Group
2
BCP 54
... BCP 56
Maximum Ratings
Parameter
Symbol
BCP 54
Unit
Collector-emitter voltage
R
BE
1 k
V
CE0
V
CER
45
45
V
Collector-base voltage
V
CB0
45
Emitter-base voltage
V
EB0
Collector current
I
C
A
Base current
I
B
mA
Total power dissipation,
T
S
= 124 C
1)
P
tot
W
Junction temperature
T
j
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
1)
R
th JA
72
K/W
Peak collector current
I
CM
Peak base current
I
BM
BCP 55
60
60
60
1
100
1.5
150
1.5
200
Values
BCP 56
80
100
100
5
Junction - soldering point
R
th JS
17
1)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Semiconductor Group
3
BCP 54
... BCP 56
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
BCP 54
BCP 55
BCP 56
V
(BR)CE0
45
60
80
nA
A
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0,
T
A
= 150 C
I
CB0
100
20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
1)
I
C
= 100
A,
I
B
= 0
BCP 54
BCP 55
BCP 56
V
(BR)CB0
45
60
100
Emitter-base breakdown voltage
I
E
= 10
A,
I
C
= 0
V
(BR)EB0
5
V
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
V
CEsat
0.5
DC current gain
I
C
= 5 mA,
V
CE
= 2 V
I
C
= 150 mA,
V
CE
= 2 V
BCP 54/BCP 55/BCP 56
BCP 54/BCP 55/BCP 56-10
BCP 54/BCP 55/BCP 56-16
I
C
= 500 mA,
V
CE
= 2 V
h
FE
25
40
63
100
25
100
160
250
160
250
Base-emitter voltage
1)
I
C
= 500 mA,
V
CE
= 2 V
V
BE
1
A
Emitter-base cutoff current
V
EB
= 5 V
I
EB0
10
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 100 MHz
f
T
100
AC characteristics
1)
Pulse test conditions:
t
300
s,
D
= 2 %.
Semiconductor Group
4
BCP 54
... BCP 56
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 2 V
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 10 V
Collector cutoff current
I
CB0
=
f
(
T
A
)
V
CB
= 30 V
Semiconductor Group
5
BCP 54
... BCP 56
Collector-emitter saturation voltage
I
C
=
f
(
V
CEsat
)
h
FE
= 10
Base-emitter saturation voltage
I
C
=
f
(
V
BEsat
)
h
FE
= 10
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
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