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Электронный компонент: Q62702-C2128

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Semiconductor Group
1
NPN Silicon AF Transistor
BCP 68
Maximum Ratings
1
2
3
4
B
C
E
C
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BCP 68
BCP 68-10
BCP 68-16
BCP 68-25
Q62702-C2126
Q62702-C2127
Q62702-C2128
Q62702-C2129
BCP 68
BCP 68-10
BCP 68-16
BCP 68-25
SOT-223
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
CES
20
25
V
Peak collector current
I
CM
2
Base current
I
B
100
mA
Collector current
I
C
1
A
Junction temperature
T
j
150
C
Total power dissipation,
T
S
= 124 C
2)
P
tot
1.5
W
Storage temperature range
T
stg
65 ... + 150
Collector-base voltage
V
CB0
25
Thermal Resistance
Junction - ambient
2)
R
th JA
72
K/W
Emitter-base voltage
V
EB0
5
Peak base current
I
BM
200
Junction - soldering point
R
th JS
17
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
q
For general AF application
q
High collector current
q
High current gain
q
Low collector-emitter saturation voltage
q
Complementary type: BCP 69 (PNP)
01.97
Semiconductor Group
2
BCP 68
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 30 mA,
I
B
= 0
V
(BR)CE0
20
Collector-base breakdown voltage
I
C
= 10
A,
I
B
= 0
V
(BR)CB0
25
DC current gain
1)
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 1 V
BCP 68
BCP 68-10
BCP 68-16
BCP 68-25
I
C
= 1 A,
V
CE
= 1 V
h
FE
50
85
85
100
160
60


100
160
250

375
160
250
375
MHz
Transition frequency
I
C
= 100 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
100
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
AC characteristics
Emitter-base breakdown voltage
I
E
= 10
A,
I
B
= 0
V
(BR)EB0
5
nA
A
Collector-base cutoff current
V
CB
= 25 V
V
CB
= 25 V,
T
A
= 150 C
I
CB0


100
100
nA
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
I
EB0
100
V
Collector-emitter saturation voltage
1)
I
C
= 1 A,
I
B
= 100 mA
V
CEsat
0.5
Base-emitter voltage
1)
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 1 A,
V
CE
= 1 V
V
BE

0.6

1
Collector-emitter breakdown voltage
I
C
= 10
A,
V
BE
= 0
V
(BR)CES
25
1)
Pulse test conditions:
t
300
s,
D
= 2 %.
Semiconductor Group
3
BCP 68
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Collector cutoff current
I
CB0
=
f
(
T
A
)
V
CB
= 25 V
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5 V,
f
= 100 MHz
DC current gain
h
FE
=
f
(
I
C
)
V
CB
= 1 V
Semiconductor Group
4
BCP 68
Collector-emitter saturation voltage
I
C
=
f
(
V
CEsat
)
h
FE
= 10
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Base-emitter saturation voltage
I
C
=
f
(
V
BEsat
)
h
FE
= 10