Semiconductor Group
1
PNP Silicon AF Transistor
BCP 69
Maximum Ratings
1
2
3
4
B
C
E
C
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
Q62702-C2130
Q62702-C2131
Q62702-C2132
Q62702-C2133
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
SOT-223
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
CES
20
25
V
Peak collector current
I
CM
2
Base current
I
B
100
mA
Collector current
I
C
1
A
Junction temperature
T
j
150
C
Total power dissipation,
T
S
= 124 C
2)
P
tot
1.5
W
Storage temperature range
T
stg
65 ... + 150
Collector-base voltage
V
CB0
25
Thermal Resistance
Junction - ambient
2)
R
th JA
72
K/W
Emitter-base voltage
V
EB0
5
Peak base current
I
BM
200
Junction - soldering point
R
th JS
17
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
q
For general AF application
q
High collector current
q
High current gain
q
Low collector-emitter saturation voltage
q
Complementary type: BCP 68 (NPN)
01.97
Semiconductor Group
2
BCP 69
DC current gain
1)
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 1 V
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
I
C
= 1 A,
V
CE
= 1 V
h
FE
50
85
85
100
160
60
100
160
250
375
160
250
375
MHz
Transition frequency
I
C
= 100 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
100
AC characteristics
V
Collector-emitter saturation voltage
1)
I
C
= 1 A,
I
B
= 100 mA
V
CEsat
0.5
Base-emitter voltage
1)
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 1 A,
V
CE
= 1 V
V
BE
0.6
1
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 30 mA,
I
B
= 0
V
(BR)CE0
20
Collector-base breakdown voltage
I
C
= 10
A,
I
B
= 0
V
(BR)CB0
25
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Emitter-base breakdown voltage
I
E
= 10
A,
I
B
= 0
V
(BR)EB0
5
nA
A
Collector-base cutoff current
V
CB
= 25 V
V
CB
= 25 V,
T
A
= 150 C
I
CB0
100
100
nA
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
I
EB0
100
Collector-emitter breakdown voltage
I
C
= 10
A,
V
BE
= 0
V
(BR)CES
25
1)
Pulse test conditions:
t
300
s,
D
= 2 %.