Semiconductor Group
1
NPN Silicon Double Transistors
BCV 61
5.91
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BCV 61 A
BCV 61 B
BCV 61 C
Q62702-C2155
Q62702-C2156
Q62702-C2157
1Js
1Ks
1Ls
SOT-143
Parameter
Symbol
Values
Unit
Collector-emitter voltage
(transistor T1)
V
CE0
30
V
Collector-base voltage (open emitter)
(transistor T1)
V
CB0
30
Junction temperature
T
j
150
C
Total power dissipation,
T
S
99 C
2)
P
tot
300
mW
Storage temperature range
T
stg
65 ... + 150
Collector current
I
C
100
mA
Emitter-base voltage
V
EBS
6
Collector peak current
I
CM
200
Base peak current (transistor T1)
I
BM
200
Thermal Resistance
Junction - ambient
2)
R
th JA
240
K/W
Junction - soldering point
R
th JS
170
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Preliminary Data
q
To be used as a current mirror
q
Good thermal coupling and
V
BE
matching
q
High current gain
q
Low emitter-saturation voltage
Semiconductor Group
2
BCV 61
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
1)
I
C
= 0.1 mA,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
BCV 61 A
BCV 61 B
BCV 61 C
V
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
V
(BR)CE0
30
nA
A
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0
, T
A
= 150 C
I
CB0
15
5
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics for transistor T1
Collector-base breakdown voltage
I
C
= 10
A,
I
B
= 0
V
(BR)CB0
30
Emitter-base breakdown voltage
I
E
= 10
A,
I
C
= 0
V
(BR)EBS
6
mV
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
CEsat
90
200
250
600
h
FE
100
110
200
420
180
290
520
220
450
800
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
C
= 0.5 mA
I
C
= 100 mA,
I
C
= 5 mA
V
BEsat
700
900
Base-emitter voltage
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
V
BE
580
660
700
770
1)
Pulse test conditions:
t
300
s,
D
= 2 %.
Semiconductor Group
3
BCV 61
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Base-emitter forward voltage
I
E
= 10
A
I
E
= 250 mA
V
BES
0.4
1.8
mA
Thermal coupling of transistor T1 and
transistor T2
1)
T1:
V
CE
= 5 V
Maximum current for thermal stability of
I
C1
I
E2
5
DC characteristics for transistor T2
Matching of transistor T1 and transistor T2
at
I
E2
= 0.5 mA and
V
CE1
= 5 V
T
A
= 25 C
T
A
= 150 C
I
C1
/
I
C2
I
C1
/
I
C2
0.7
0.7
1.3
1.3
Unit
Values
Parameter
Symbol
min.
typ.
max.
MHz
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
250
AC characteristics for transistor T1
pF
Collector-base capacitance
V
CB
= 10 V,
I
C
=
i
C
= 0,
f
= 1 MHz
C
cb
3
Input capacitance
V
EB
= 0.5 V,
I
C
=
i
C
= 0,
f
= 1 MHz
C
ibo
8
k
Input impedance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
h
11e
4.5
dB
Noise figure
I
C
= 200
A,
V
CE
= 5 V,
R
S
= 2 k
f
= 1 kHz,
B
= 200 Hz
F
2
10
4
Open-circuit reverse voltage transfer ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
h
12e
2
Short-circuit forward current transfer ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
h
21e
100
900
S
Open-circuit output admittance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
h
22e
30
1)
Without emitter resistor. Device mounted on alumina 15 mm
16.5 mm
0.7 mm.
Semiconductor Group
4
BCV 61
Test circuit for current matching
Characteristic for determination of
V
CE1
at specified
R
E
range with
I
E2
as parameter under
condition of
I
C1
/
I
E2
= 1.3
Note: Voltage drop at contacts:
V
CO
<
V
T
= 16 mV
2
3
Note: BCV 61 with emitter resistors
Semiconductor Group
5
BCV 61
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
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