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Электронный компонент: Q62702-C2257

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BCR 135
Semiconductor Group
Jun-18-1997
1
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (
R
1
=10k
,
R
2
=47k
)
Type
Marking
Ordering Code
Package
Pin Configuration
SOT-23
BCR 135
WJs
Q62702-C2257
1 = B
2 = E
3 = C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
V
50
50
V
CBO
Collector-base voltage
Emitter-base voltage
6
V
EBO
Input on Voltage
V
i(on)
20
100
mA
I
C
DC collector current
Total power dissipation,
T
S
= 102 C
P
tot
mW
200
Junction temperature
T
j
150
C
65...+150
Storage temperature
T
stg
Thermal Resistance
Junction ambient
1)
350
K/W
R
thJA
Junction - soldering point
R
thJS
240
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2Cu
BCR 135
Semiconductor Group
Jun-18-1997
2
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
-
-
V
50
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
= 100 A,
I
B
= 0
50
-
V
(BR)CBO
Collector-base breakdown voltage
I
C
= 10 A,
I
B
= 0
-
-
-
nA
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
I
CBO
100
-
-
A
167
I
EBO
Emitter cutoff current
V
EB
= 6 V,
I
C
= 0
70
h
FE
-
-
-
DC current gain 1)
I
C
= 5 mA,
V
CE
= 5 V
-
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
V
CEsat
-
0.3
V
0.5
-
Input off voltage
I
C
= 100 A,
V
CE
= 5 V
V
i(off)
1
0.5
-
Input on Voltage
I
C
= 2 mA,
V
CE
= 0.3 V
V
i(on)
1.4
7
10
k
13
R
1
Input resistor
0.19
R
1
/
R
2
Resistor ratio
0.21
0.24
-
AC Characteristics
f
T
-
-
MHz
150
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
C
cb
-
3
pF
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
-
1) Pulse test: t < 300
s; D < 2%
BCR 135
Semiconductor Group
Jun-18-1997
3
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
10
-1
10
0
10
1
mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
Collector-Emitter Saturation Voltage
V
CEsat
=
f (I
C
),
h
FE
= 20
0.0
0.2
0.4
0.6
V
1.0
V
CEsat
0
10
1
10
2
10
mA
I
C
Input on Voltage
V
i(on)
=
f (I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
10
0
10
1
V
V
i(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage
V
i(off)
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
0.0
0.5
1.0
V
2.0
V
i(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
BCR 135
Semiconductor Group
Jun-18-1997
4
Total power dissipation
P
tot
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
S
T
A
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0