Semiconductor Group
1
04.96
NPN Silicon AF Transistor
BC 846 W ... BC 850 W
Features
q
For AF input stages and driver applications
q
High current gain
q
Low collector-emitter saturation voltage
q
Low noise between 30Hz and 15 kHz
q
Complementary types: BC 856 W, BC 857 W,
BC 858 W,BC 859 W,
BC 860 W (PNP)
Type
Marking
Ordering code
(tape and reel)
Pin Configuration
1
2
3
Package
BC 846 AW
BC 846 BW
BC 847 AW
BC 847 BW
BC 847 CW
BC 848 AW
BC 848 BW
BC 848 CW
BC 849 BW
BC 849 CW
BC 850 BW
BC 850 CW
1 As
1 Bs
1 Es
1 Fs
1 Gs
1 Js
1 Ks
1 Ls
2 Bs
2 Cs
2 Fs
2 Gs
Q62702-C2319
Q62702-C2279
Q62702-C2304
Q62702-C2305
Q62702-C2306
Q62702-C2307
Q62702-C2308
Q62702-C2309
Q62702-C2310
Q62702-C2311
Q62702-C2312
Q62702-C2313
B
E
C
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
BC 846W ... BC 850W
Semiconductor Group
2
Maximum Ratings
Description
Symbol
Unit
Collector-emitter voltage
V
CEO
V
Collector-base voltage
V
CBO
V
Collector-emitter voltage
V
CES
V
Collector current
I
C
mA
Total power dissipation,
T
S
= 115 C
P
tot
mW
Junction temperature
T
j
C
Storage temperature range
T
stg
65 to 150
C
Thermal Resistance
Junction - ambient
1)
R
th JA
240
K/W
Emitter-base voltage
V
EBO
V
Collector peak current
I
CM
mA
100
6
6
5
250
150
80
50
30
200
BC846W
BC 847 W
BC 849 W BC 848 W
BC 840 W
Junction - soldering point
R
th JS
105
K/W
65
45
30
80
50
30
1)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/1 cm
2
Cu.
BC 846W ... BC 850W
Semiconductor Group
3
Characteristic at
T
A
= 25 C, unless otherwise specified.
DC current gain
I
C
= 10
A,
V
CE
= 5 V
BC 846 AW ... BC 848 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
I
C
= 2 mA,
V
CE
= 5 V
BC 846 AW ... BC 848 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 846 W
BC 847 W, BC 850 W
BC 848 W, BC 849 W
V
(BR)CEO
65
45
30
nA
A
Collector-base cutoff current
V
CB
= 30 V
V
CB
= 30 V,
T
A
= 150 C
I
CBO
15
5
Unit
Ratings
Description
Symbol
min.
typ.
max.
DC Characteristics
V
Collector-base breakdown voltage
1)
I
C
= 100
A
BC 846 W
BC 847 W, BC 850 W
BC 848 W, BC 849 W
V
(BR)CBO
80
50
30
V
Emitter-base breakdown voltage
I
E
= 10
A
BC 846 W, BC 847 W
BC 848 W, BC 849 W
BC 850
V
(BR)EBO
6
5
mV
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
CEsat
90
900
250
650
h
FE
140
250
480
180
290
520
220
450
800
V
Collector-emitter breakdown voltage
I
C
= 10
A,
V
BE
= 0
BC 846 W
BC 847 W, BC 850 W
BC 848 W, BC 849 W
V
(BR)CBO
80
50
30
mV
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
CEsat
700
900
mV
Base-emitter voltage
1)
I
C
= 2 mA,
V
CE
= 0.5 mA
I
C
= 10 mA,
V
CE
= 5 mA
V
CEsat
580
660
700
770
110
200
420
1)
Pulse test :
t
300
s,
D
= 2 %.
BC 846W ... BC 850W
Semiconductor Group
4
Characteristics at
T
A
= 25 C, unless otherwise specified.
Curves see BC 846 ... BC 840
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
250
V
Equivalent noise voltage
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 k
f = 10 Hz ... 50 Hz
BC 850 W
V
n
0.135
Unit
Ratings
Description
Symbol
min.
typ.
max.
AC Characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
2
k
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 846 AW ... BC 849 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
h
11e
2.7
4.5
8.7
pF
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
ibo
10
10
4
Open-circuit reverse voltage transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 846 AW ... BC 849 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
h
12e
1.5
2.0
3.0
-
Short-circuit forward current transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 846 AW ... BC 849 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
h
21e
200
330
600
S
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 846 AW ... BC 849 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
h
22e
18
30
60
dB
Noise figure
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 k
BC 849 W
f = 30 Hz ... 15 kHz
BC 850 W
f = 1 kHz,
f = 200 Hz
BC 849 W
BC 850 W
F
1.4
1.4
1.2
1.0
4
3
4
4
BC 846W ... BC 850W
Semiconductor Group
5
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Collector-base capacitance
C
CB0
=
f
(
V
CB0
)
Emitter-base capacitance
C
EB0
=
f
(
V
EB0
)
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5 V
BC 846W ... BC 850W
Semiconductor Group
6
Collector cutoff current
I
CB0
=
f
(
T
A
)
V
CB
= 30 V
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 5 V
Collector-emitter saturation voltage
I
C
=
f
(
V
CEsat
),
h
FE
= 20
Base-emitter saturation voltage
I
C
=
f
(
V
BEsat
),
h
FE
= 20
BC 846W ... BC 850W
Semiconductor Group
7
h parameter
h
e
=
f
(
I
C
) normalized
V
CE
= 5 V
Noise figure
F
=
f
(
V
CE
)
I
C
= 0.2 mA,
R
S
= 2 k
,
f
= 1 kHz
h parameter
h
e
=
f
(
V
CE
) normalized
I
C
= 2 mA
Noise figure
F
=
f
(
f
)
I
C
= 0.2 mA,
V
CE
= 5 V
, R
S
= 2 k
BC 846W ... BC 850W
Semiconductor Group
8
Noise figure
F
=
f
(
I
C
)
V
CE
= 5 V,
f
= 120 Hz
Noise figure
F
=
f
(
I
C
)
V
CE
= 5 V,
f
= 10 kHz
Noise figure
F
=
f
(
I
C
)
V
CE
= 5 V,
f
= 1 kHz
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