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Электронный компонент: Q62702-C2294

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Semiconductor Group
1
04.96
PNP Silicon AF Transistors
BC 856W ... BC 860W
Features
q
For AF input stages and driver applications
q
High current gain
q
Low collector-emitter saturation voltage
q
Low noise between 30 Hz and 15 kHz
q
Complementary types: BC 847W, BC 848W,
BC 849W, BC 850W (NPN)
Type
Marking
Package
1)
Pin Configuration
BC 856 AW
BC 856 BW
BC 857 AW
BC 857 BW
BC 857 CW
BC 858 AW
BC 858 BW
BC 858 CW
BC 859 AW
BC 859 BW
BC 859 CW
BC 860 BW
BC 860 CW
Q62702-C2335
Q62702-C2292
Q62702-C2293
Q62702-C2294
Q62702-C2295
Q62702-C2296
Q62702-C2297
Q62702-C2298
Q62702-C2299
Q62702-C2300
Q62702-C2301
Q62702-C2302
Q62702-C2303
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
SOT-323
1
2
3
Ordering Code
(tape and reel)
B
E
C
1)
For detailed information see chapter Package Outlines.
BC 856W ... BC 860W
Semiconductor Group
2
Maximum Ratings
Description
Symbol
Unit
Collector-emitter voltage
V
CEO
V
Collector-base voltage
V
CBO
V
Collector-emitter voltage
V
CES
V
Collector current
I
C
mA
Total power dissipation,
T
S
= 115 C
P
tot
mW
Junction temperature
T
j
C
Storage temperature range
T
stg
65 to 150
C
Thermal Resistance
Junction - ambient
1)
R
th JA
240
K/W
Emitter-base voltage
V
EBO
V
Collector peak current
I
CM
mA
100
5
5
5
250
150
80
50
30
200
Junction - soldering point
R
th JS
105
K/W
65
45
30
80
50
30
BC 856W BC 857W
BC 860W
BC 858W
BC 859W
BC 856W ... BC 860W
Semiconductor Group
3
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 856W
BC 857W, BC 860W
BC 858W, BC 859W
V
(BR)CE0
65
45
30




nA
A
Collector cutoff current
V
CB
= 30 V
V
CB
= 30 V,
T
A
= 150 C
I
CB0


15
5
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
A
BC 856W
BC 857W, BC 860W
BC 858W, BC 859W
V
(BR)CB0
80
50
30




Emitter-base breakdown voltage
I
E
= 1
A
V
(BR)EB0
5
mV
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
CEsat

75
250
300
650
DC current gain
I
C
= 10
A,
V
CE
= 5 V
BC 856 AW ... BC 859 AW
BC 856 BW ... BC 860 BW
BC 857 CW ... BC 860 CW
I
C
= 2 mA,
V
CE
= 5 V
BC 856 AW ... BC 859 AW
BC 856 BW ... BC 860 BW
BC 857 CW ... BC 860 CW
h
FE


125
220
420
140
250
480
180
290
520


250
475
800
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
BEsat

700
850

Collector-emitter breakdown voltage
I
C
= 10
A,
V
BE
= 0
BC 856W
BC 857W, BC 860W
BC 858W, BC 859W
V
(BR)CES
80
50
30




Base-emitter voltage
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
V
BE(on)
600
650
750
820
1)
Pulse test:
t
300
s,
D
= 2 %.
BC 856W ... BC 860W
Semiconductor Group
4
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
250
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
3
Input capacitance
V
CB
= 0.5 V,
f
= 1 MHz
C
ibo
10
k
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 856 AW ... BC 859 AW
BC 856 BW ... BC 860 BW
BC 857 CW ... BC 860 CW
h
11e


2.7
4.5
8.7


dB
Noise figure
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 k
f
= 30 Hz ... 15 kHz
BC 859W
BC 860W
f
= 1 kHz,
f
= 200 Hz
BC 859W
BC 860W
F



1.2
1.0
1.0
1.0
4
3
4
4
10
4
Open-circuit reverse voltage transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 856 AW ... BC 859 AW
BC 856 BW ... BC 860 BW
BC 857 CW ... BC 860 CW
h
12e


1.5
2.0
3.0


Short-circuit forward current transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 856 AW ... BC 859 AW
BC 856 BW ... BC 860 BW
BC 857 CW ... BC 860 CW
h
21e


200
330
600


S
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 856 AW ... BC 859 AW
BC 856 BW ... BC 860 BW
BC 857 CW ... BC 860 CW
h
22e


18
30
60


V
Equivalent noise voltage
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 k
f
= 10 Hz ... 50 Hz
BC 860W
V
n
0.110
BC 856W ... BC 860W
Semiconductor Group
5
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Collector-base capacitance
C
CB0
=
f
(
V
CB0
)
Emitter-base capacitance
C
EB0
=
f
(
V
EB0
)
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5 V