Semiconductor Group
1
Dec-19-1996
BC 807-16W
PNP Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC817W, BC818W (NPN)
Type
Marking Ordering Code
Pin Configuration
Package
BC 807-16W
5As
Q62702-C2325
1 = B
2 = E
3 = C
SOT-323
BC 807-25W
5Bs
Q62702-C2326
1 = B
2 = E
3 = C
SOT-323
BC 807-40W
5Cs
Q62702-C2327
1 = B
2 = E
3 = C
SOT-323
BC 808-16W
5Es
Q62702-C2328
1 = B
2 = E
3 = C
SOT-323
BC 808-25W
5Fs
Q62702-C2329
1 = B
2 = E
3 = C
SOT-323
BC 808-40W
5Gs
Q62702-C2330
1 = B
2 = E
3 = C
SOT-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
BC 807 W
BC 808 W
V
CEO
25
45
V
Collector-base voltage
BC 807 W
BC 808 W
V
CBO
30
50
Emitter-base voltage
V
EBO
5
DC collector current
I
C
500
mA
Peak collector current
I
CM
1
A
Base current
I
B
100
mA
Total power dissipation,
T
S
= 130C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
215
K/W
Junction - soldering point
R
thJS
80
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
2
Dec-19-1996
BC 807-16W
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0 , BC 807 W
I
C
= 10 mA,
I
B
= 0 , BC 808 W
V
(BR)CEO
25
45
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 A,
I
B
= 0 , BC 807 W
I
C
= 10 A,
I
B
= 0 , BC 808 W
V
(BR)CBO
30
50
-
-
-
-
Base-emitter breakdown voltage
I
E
= 10 A,
I
C
= 0
V
(BR)EBO
5
-
-
Collector-base cutoff current
V
CB
= 25 V,
T
A
= 25 C
V
CB
= 25 V,
T
A
= 150 C
I
CBO
-
-
-
-
50
100
nA
A
Emitter cutoff current
V
EB
= 4 V,
I
C
= 0
I
EBO
-
-
100
nA
DC current gain
I
C
= 100 mA,
V
CE
= 1 V, BC ... 16 W
I
C
= 100 mA,
V
CE
= 1 V, BC ... 25 W
I
C
= 100 mA,
V
CE
= 1 V, BC ... 40 W
I
C
= 300 mA,
V
CE
= 1 V, BC ... 16 W
I
C
= 300 mA,
V
CE
= 1 V, BC ... 25 W
I
C
= 300 mA,
V
CE
= 1 V, BC ... 40 W
h
FE
170
100
60
250
160
100
-
-
-
350
250
160
-
-
-
630
400
250
-
Collector-emitter saturation voltage 1)
I
C
= 500 mA,
I
B
= 50 mA
V
CEsat
-
-
0.7
V
Base-emitter saturation voltage 1)
I
C
= 500 mA,
I
B
= 50 mA
V
BEsat
-
-
1.2
1) Pulse test: t < 300
s; D < 2%
Semiconductor Group
3
Dec-19-1996
BC 807-16W
PNP Silicon AF Transistor
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f = 100 MHz
f
T
-
200
-
MHz
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
C
cb
-
10
-
pF
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
C
eb
-
60
-
Semiconductor Group
4
Dec-19-1996
BC 807-16W
Total power dissipation
P
tot
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax
/
P
totDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collectot cutoff current
I
CBO
=
f (T
A
)
V
CB
= 60V
Semiconductor Group
5
Dec-19-1996
BC 807-16W
DC current gain
h
FE
=
f (I
C
)
V
CE
= 1V
Transition frequency
f
T
=
f (I
C
)
VCE = 5V
Base-emitter saturation voltage
I
C
= f (
V
BEsat
),
h
FE
= 10
Collector-emitter saturation voltage
I
C
= f (
V
CEsat
),
h
FE
= 10
PDF 
ZIP