ChipFind - документация

Электронный компонент: Q62702-C2481

Скачать:  PDF   ZIP
Semiconductor Group
1
Nov-27-1996
BCR 400W
Active Bias Controller
Characteristics
Supplies stable bias current even at low battery voltage
and extreme ambient temperature variation
Low voltage drop of 0.7V
Application notes
Stabilizing bias current of NPN transistors and FETs from
from less than 0.2mA up to more than 200mA
Ideal supplement for SIEGET and other RF transistors
also usable as current source up to 5mA
Type
Marking Ordering Code Pin Configuration
Package
BCR 400W W4s
Q62702-C2481 1
GND/E
NPN
2
Contr/B
NPN
3
V
S
4
Rext/C
NPN
SOT-343
(E
NPN
,B
NPN
,C
NPN
are electrodes of a stabilized NPN transistor)
Maximum Ratings
Parameter
Symbol
Values
Unit
Supply voltage
V
S
18
V
Control current
I
Contr.
10
mA
Control voltage
V
Contr.
16
V
Reverse voltage between all terminals
V
R
0.5
Total power dissipation,
T
S
= 117C
P
tot
330
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
170
K/W
Junction - soldering point
R
thJS
100
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
Semiconductor Group
2
Nov-27-1996
BCR 400W
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Additional current consumption
V
S
= 3 V
I
0
-
20
40
A
Lowest stabilizing current
V
S
= 3 V
I
min
-
0.1
-
mA
DC Characteristics with stabilized NPN-Transistors
Lowest sufficient battery voltage
I
B (NPN)
< 0.5 mA
V
Smin
-
1.6
-
V
Voltage drop
(V
S
-
V
CE
)
I
C
= 25 mA
V
drop
-
0.65
-
Change of
I
C
versus
h
FE
h
FE
> 50
I
C
/
I
C
-
0.08
-
hFE/hFE
Change of
I
C
versus
V
S
V
S
> 3 V
I
C
/
I
C
-
0.15
-
VS/VS
Change of
I
C
versus
T
A
I
C
/
I
C
-
0.2
-
%/K
Semiconductor Group
3
Nov-27-1996
BCR 400W
Collector current
I
C
=
f(h
FE
)
I
C
and
h
FE
refer to stabilized NPN Transistor
Parameter
R
ext.
(
)
0
50
100
150
200
250
-
350
h
FE
-1
10
0
10
1
10
2
10
3
10
mA
I
C
760
67
5.9
Collector Current
I
C
=
f(V
S
)
of stabilized NPN Transistor
Parameter
R
ext.
(
)
0
2
4
6
8
V
11
V
S
-1
10
0
10
1
10
2
10
3
10
mA
I
C
2.1
5.9
12.4
67
760
4.3k
Voltage drop
V
drop
=
f(I
C
)
10
-2
10
-1
10
0
10
1
10
2
10
3
mA
I
C
0.5
0.6
0.7
0.8
V
1.0
V
drop
Collector current
I
C
=
f(R
ext.
)
of stabilized NPN Transistor
10
0
10
1
10
2
10
3
Ohm
R
ext.
-1
10
0
10
1
10
2
10
3
10
mA
I
C
Semiconductor Group
4
Nov-27-1996
BCR 400W
Collector current
T
A
=
f(I
C
)
of stabilized NPN Transistor
Parameter:
R
ext.
(
)
-40 -20
0
20
40
60
80 100 120 C 160
T
A
-1
10
0
10
1
10
2
10
3
10
mA
I
C
2.2
6
26
65
290
760
4.3k
Control current
I = f(R
ext.
)
in current source application
10
-1
10
0
10
1
10
2
KOhm
R
ext.
-1
10
0
10
1
10
mA
I
Contr.
Control current
I = f(T
A
)
in current source application
-20
0
20
40
60
C
100
T
A
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
mA
1.5
I
Contr.
Control current
I = f(V
S
)
in current source application
0
1
2
3
4
5
6
7
8
V
10
V
S
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
mA
2.0
I
Contr.
Semiconductor Group
5
Nov-27-1996
BCR 400W
Total power dissipation
P
tot
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
50
100
150
200
250
300
mW
400
P
tot
T
S
T
A
Note that up to
T
S
= 130C
it is not possible to exceed
P
tot
respecting the maximum
ratings of
V
S
and
I
Contr.
The collector or drain
current (respectively) of
the stabilized RF transistor
does not affect BCR 400
directly, as it provides just the
base current.
Typical application for GaAs FET
with active bias controller
Semiconductor Group
6
Nov-27-1996
BCR 400W
RF transistor controlled by BCR400
Be aware that BCR 400 stabilizes bias
current of transistors in an active control loop.
In order to avoid loop oscillation (hunting),
time constants must be chosen adequately,
i.e. C1 >= 10 x C2
RX/TX antenna switch, compatible to control logic
and working at wide battery voltage range
Semiconductor Group
7
Nov-27-1996
BCR 400W
Low voltage reference
Precision timer with BCR 400
providing constant charge current