Semiconductor Group
1
Dec-09-1996
BCR 48PN
NPN/PNP Silicon Digital Tansistor Array
Switching circuit, inverter, interface circuit,
drive circuit
Two (galvanic) internal isolated NPN/PNP
Transistor in one package
Built in bias resistor
NPN: R1 = 47k
, R2 = 47k
PNP: R1 = 2.2k
, R2 = 47k
Tape loading orientation
Type
Marking Ordering Code Pin Configuration
Package
BCR 48PN
WTs
Q62702-C2496 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
50
V
Collector-base voltage
V
CBO
50
Emitter-base voltage NPN
V
EBO
10
Emitter-base voltage PNP
V
EBO
5
DC collector current NPN
I
C
70
mA
DC collector current PNP
I
C
100
Input on voltage NPN
V
i(on)
50
V
Input on voltage PNP
V
i(on)
10
Total power dissipation,
T
S
= 115C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
275
K/W
Junction - soldering point
R
thJS
140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
2
Dec-09-1996
BCR 48PN
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics for NPN Type
Collector-emitter breakdown voltage
I
C
= 100 A,
I
B
= 0
V
(BR)CEO
50
-
-
V
Collector-base breakdown voltage
I
C
= 100 A,
I
B
= 0
V
(BR)CBO
50
-
-
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter cutoff current
V
EB
= 10 V,
I
C
= 0
I
EBO
-
-
164
A
DC current gain
I
C
= 5 mA,
V
CE
= 5 V
h
FE
70
-
-
-
Collector-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
V
CEsat
-
-
0.3
mV
Input off voltage
I
C
= 100 A,
V
CE
= 5 V
V
i(off)
0.8
-
1.5
V
Input on Voltage
I
C
= 2 mA,
V
CE
= 0.3 V
V
i(on)
1
-
3
Input resistor
R
1
32
47
62
k
Resistor ratio
R
1
/
R
2
0.9
1
1.1
-
AC Characteristics for NPN Type
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f = 100 MHz
f
T
-
100
-
MHz
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
C
cb
-
3
-
pF
1) Pulse test: t < 300
s; D < 2%
Semiconductor Group
3
Dec-09-1996
BCR 48PN
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics for PNP Type
Collector-emitter breakdown voltage
I
C
= 100 A,
I
B
= 0
V
(BR)CEO
50
-
-
V
Collector-base breakdown voltage
I
C
= 100 A,
I
B
= 0
V
(BR)CBO
50
-
-
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter cutoff current
V
EB
= 5 V,
I
C
= 0
I
EBO
-
-
164
DC current gain
I
C
= 5 mA,
V
CE
= 5 V, BC ... 16 W
h
FE
70
-
-
-
Collector-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
V
CEsat
-
-
0.3
V
Input off voltage
I
C
= 100 A,
V
CE
= 5 V
V
i(off)
0.4
-
0.8
Input on voltage
I
C
= 2 mA,
V
CE
= 0.3 V
V
i(on)
0.5
-
1.1
Input resistor
R
1
1.5
2.2
2.9
k
Resistor ratio
R
1
/
R
2
0.042
0.047
0.052
-
AC Characteristics for PNP Type
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f = 100 MHz
f
T
-
200
-
MHz
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
C
cb
-
3
-
pF
1) Pulse test: t < 300
s; D < 2%
Semiconductor Group
4
Dec-09-1996
BCR 48PN
NPN TYPE
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
10
-1
10
0
10
1
10
2
mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
Collector-Emitter Saturation Voltage
V
CEsat
=
f(I
C
),
h
FE
= 20
0.0
0.2
0.4
0.6
V
1.0
V
CEsat
0
10
1
10
2
10
mA
I
C
Input on Voltage
V
i(on)
=
f(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
10
0
10
1
V
V
i(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage
V
i(off)
=
f(I
C
)
V
CE
= 5V (common emitter configuration)
0
1
2
3
V
5
V
i(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
Semiconductor Group
5
Dec-09-1996
BCR 48PN
PNP TYPE
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
10
-1
10
0
10
1
mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
Collector-Emitter Saturation Voltage
V
CEsat
=
f(I
C
),
h
FE
= 20
0.0
0.1
0.2
0.3
V
0.5
V
CEsat
0
10
1
10
2
10
mA
I
C
Input on Voltage
V
i(on)
=
f(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
10
0
10
1
V
V
i(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage
V
i(off)
=
f(I
C
)
V
CE
= 5V (common emitter configuration)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
1.0
V
i(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
Semiconductor Group
6
Dec-09-1996
BCR 48PN
Total power dissipation
P
tot
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
A
S
T
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax
/
P
totDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
PDF 
ZIP