Semiconductor Group
1
NPN Silicon AF Switching Transistor
BCX 12
5.91
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BCX 12
Q62702-C25
BCX 12
TO-92
C
B
E
1
2
3
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
125
V
Collector-base voltage
V
CB0
125
Emitter-base voltage
V
EB0
5
Collector current
I
C
800
mA
Peak collector current
I
CM
1
A
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation,
T
C
= 66 C
P
tot
625
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
200
K/W
Junction - case
2)
R
th JC
135
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm
25 mm
0.5 mm.
q
For general AF applications
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Complementary type: BCX 13 (PNP)
1
2
3
Semiconductor Group
2
BCX 12
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
V
(BR)CE0
125
Collector-base breakdown voltage
I
C
= 100
A,
I
B
= 0
V
(BR)CB0
125
Emitter-base breakdown voltage
I
E
= 10
A,
I
C
= 0
V
(BR)EBS
5
nA
A
Collector-base cutoff current
V
CB
= 100 V,
I
E
= 0
V
CB
= 100 V,
I
E
= 0,
T
A
= 150 C
I
CB0
100
10
nA
Emitter cutoff current
V
EB
= 4 V
I
EB0
100
DC current gain
1)
I
C
= 1 mA
,
V
CE
= 1 V
I
C
= 10 mA
, V
CE
= 1 V
I
C
= 100 mA
, V
CE
= 1 V
I
C
= 200 mA
, V
CE
= 1 V
h
FE
25
50
63
40
V
Collector-emitter saturation voltage
1)
I
C
= 500 mA
, I
B
= 50 mA
V
CEsat
1.0
Base-emitter saturation voltage
1)
I
C
= 500 mA
, I
B
= 50 mA
V
BEsat
1.6
MHz
Transition frequency
I
C
= 20 mA
, V
CE
= 5 V,
f
= 20 MHz
f
T
100
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
10
AC characteristics
1)
Pulse test:
t
300
s,
D
2 %.
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