BC 846PN
Semiconductor Group
Sep-07-1998
1
NPN/PNP Silicon AF Transistor Array
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientation
VPS05604
6
3
1
5
4
2
PIN Configuration
Type
Marking
Package NPN-Transistor
Ordering Code
1 = E
6 = C
2 = B
Q62702-C2537
SOT-363 PNP-Transistor 4 = E
3 = C
5 = B
BC 846PN
1Os
Maximum Ratings
Parameter
Value
Symbol
Unit
V
Collector-emitter voltage
V
CEO
65
Collector-base voltage
80
V
CBO
Collector-emitter voltage
V
CES
V
80
V
EBO
V
Emitter-base voltage
5
mA
DC collector current
I
C
100
200
Peak collector current
I
CM
Total power dissipation,
T
S
= 115 C
mW
P
tot
250
T
j
150
Junction temperature
C
-65...+150
Storage temperature
T
stg
Thermal Resistance
Junction ambient
1)
R
thJA
275
K/W
Junction - soldering point
R
thJS
140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
Semiconductor Group
1
1998-11-01
BC 846PN
Semiconductor Group
Sep-07-1998
2
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
V
-
V
(BR)CEO
-
65
Collector-base breakdown voltage
I
C
= 10 A,
I
B
= 0
-
-
V
(BR)CBO
80
Collector-emitter breakdown voltage
I
C
= 10 A,
V
BE
= 0
V
(BR)CES
80
V
-
-
Emitter-base breakdown voltage
I
E
= 10 A,
I
C
= 0
-
-
V
(BR)EBO
5
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
15
nA
-
I
CBO
-
A
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 C
-
-
I
CBO
5
h
FE
-
200
-
450
250
290
DC current gain 1)
I
C
= 10 A,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
-
mV
300
650
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
90
200
V
CEsat
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
700
900
V
BEsat
-
-
-
-
Base-emitter voltage 1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
V
BE(ON)
580
-
660
-
750
820
V
1) Pulse test: t < 300
s; D < 2%
Semiconductor Group
2
1998-11-01
BC 846PN
Semiconductor Group
Sep-07-1998
3
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Unit
Values
min.
typ.
max.
AC Characteristics per Transistor
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f = 100 MHz
-
-
MHz
250
f
T
2
C
cb
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
-
-
pF
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
-
10
C
eb
-
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f = 1 kHz
4.5
k
-
h
11e
-
-
Open-circuit reverse voltage transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f = 1 kHz
2
-
10
-4
h
12e
Short-circuit forward current transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f = 1 kHz
-
-
330
-
h
21e
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f = 1 kHz
h
22e
-
30
-
s
Semiconductor Group
3
1998-11-01
BC 846PN
Semiconductor Group
Sep-07-1998
4
Total power dissipation
P
tot
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
Kein
T
A
T
S
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Semiconductor Group
4
1998-11-01
BC 846PN
Semiconductor Group
Sep-07-1998
5
Collector-base capacitt
C
CB
=
f (V
CBO
)
Emitter-base capacitt
C
EB
=
f (V
EBO
)
0
4
10
5
10
10
EHP00361
V
CB0
C
EB0
V
6
2
EB0
V
EB
C
8
10
pF
12
CB0
C
-1
0
1
C
CB
(
(
)
BC 846...850
)
Transition frequency
f
T
=
f (I
C
)
V
CE
= 5V
10
10
10
10
EHP00363
f
mA
MHz
-1
0
1
2
5
T
3
10
10
2
1
10
5
5
5
C
Collector cutoff current
I
CBO
=
f (T
A
)
V
CB
= 30V
10
0
50
100
150
EHP00381
T
A
5
10
10
nA
10
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
C
Collector-emitter saturation voltage
I
C
=
f (V
CEsat
),
h
FE
= 20
10
0
EHP00367
V
CEsat
10
mA
10
C
10
2
1
0
-1
5
5
V
0.3
0.5
100
25
-50
0.1
0.2
0.4
C
C
C
Semiconductor Group
5
1998-11-01
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