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Электронный компонент: Q62702-C2592

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BCP 51M ... BCP 53M
1
Semiconductor Group
Au -11-1998
PNP Silicon AF Transistor
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP 54M...BCP 56M(NPN)
VPW05980
1
2
3
5
4
Type
Marking Ordering Code Pin Configuration
Package
SCT-595
2 = C
5 = C
3 = E
1 = B
BCP 51M
BCP 52M
BCP 53M
AAs
AEs
AHs
Q62702-C2592
Q62702-C2593
Q62702-C2594
4 n.c.
Maximum Ratings
Parameter
Symbol
BCP 53M Unit
BCP 52M
BCP 51M
V
45
V
CEO
60
80
Collector-emitter voltage
V
CBO
45
100
Collector-base voltage
60
5
V
EBO
5
Emitter-base voltage
5
mA
DC collector current
I
C
1
Peak collector current
I
CM
A
1.5
100
mA
Base current
I
B
Peak base current
200
I
BM
P
tot
1.7
W
Total power dissipation,
T
S
77 C
C
150
Junction temperature
T
j
Storage temperature
T
stg
-65...+150
Thermal Resistance
R
thJA
98
Junction ambient
1)
K/W
Junction - soldering point
R
thJS
43
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group
1
1998-11-01
BCP 51M ... BCP 53M
2
Semiconductor Group
Au -11-1998
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Symbol
Values
Unit
Parameter
min.
max.
typ.
DC Characteristics
-
-
-
-
-
-
V
45
60
80
V
(BR)CEO
BCP 51M
BCP 52M
BCP 53M
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
45
60
100
-
-
-
BCP 51M
BCP 52M
BCP 53M
-
-
-
V
(BR)CBO
Collector-base breakdown voltage
I
C
= 100 A,
I
B
= 0
V
(BR)EBO
5
Emitter-base breakdown voltage
I
E
= 10 A,
I
C
= 0
-
-
nA
100
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
-
I
CBO
-
A
-
20
-
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 C
I
CBO
-
-
25
-
h
FE
DC current gain 1)
I
C
= 5 mA,
V
CE
= 2 V
250
h
FE
-
40
DC current gain 1)
I
C
= 150 mA,
V
CE
= 2 V
-
-
h
FE
25
DC current gain 1)
I
C
= 500 mA,
V
CE
= 2 V
0.5
-
V
CEsat
Collector-emitter saturation voltage1)
I
C
= 500 mA,
I
B
= 50 mA
-
V
1
Base-emitter voltage 1)
I
C
= 500 mA,
V
CE
= 2 V
V
BE(ON)
-
-
AC Characteristics
f
T
-
100
-
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f = 100 MHz
1) Pulse test: t
300
s, D = 2%
Semiconductor Group
2
1998-11-01
BCP 51M ... BCP 53M
3
Semiconductor Group
Au -11-1998
DC current gain
h
FE
=
f (I
C
)
V
CE
= 2V
10
EHP00261
BCP 51...53
0
4
10
mA
0
10
3
10
5
5
10
1
10
2
10
1
C
FE
h
3
10
2
10
C
100
5
25 C
-50 C
Total power dissipation
P
tot
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
200
400
600
800
1000
1200
1400
1600
mW
2000
P
tot
T
S
T
A
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
T
S
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Semiconductor Group
3
1998-11-01
BCP 51M ... BCP 53M
4
Semiconductor Group
Au -11-1998
Collector cutoff current
I
CBO
=
f (T
A
)
V
CB
= 30V
0
10
EHP00262
BCP 51...53
A
T
150
-1
4
10
CBO
nA
50
100
0
10
1
10
3
10
C
10
2
max
typ
Transition frequency
f
T
=
f (I
C
)
V
CE
= 10 V
10
EHP00260
BCP 51...53
0
3
10
mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
f
MHz
Base-emitter saturation voltage
I
C
=
f (V
BEsat
),
h
FE
= 10
0
10
EHP00263
BCP 51...53
BEsat
V
0
4
10
C
mA
0.2
1
10
2
10
3
10
0.4
0.6
0.8
1.2
V
C
100
25 C
-50C
Collector-emitter saturation voltage
I
C
=
f (V
CEsat
),
h
FE
= 10
0
10
EHP00264
BCP 51...53
CEsat
V
0.4
V
0.8
0
10
1
10
2
4
10
5
5
C
mA
5
3
10
0.2
0.6
C
100
25 C
C
-50
Semiconductor Group
4
1998-11-01