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Электронный компонент: Q62702-C2595

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BCP 54M ... BCP 56M
1
Au -11-1998
Semiconductor Group
NPN Silicon AF Transistors
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP 51M...BCP 53M(PNP)
VPW05980
1
2
3
5
4
Type
Marking Ordering Code
Package
Pin Configuration
5 = C
4 n.c.
BAs
BEs
BHs
BCP 54M
BCP 55M
BCP 56M
1 = B
2 = C
3 = E
SCT-595
Q62702-C2595
Q62702-C2606
Q62702-C2607
Maximum Ratings
Parameter
Symbol
BCP 54M BCP 55M BCP 56M Unit
Collector-emitter voltage
V
CEO
45
60
80
V
Collector-base voltage
V
CBO
45
60
100
Emitter-base voltage
V
EBO
5
5
5
DC collector current
I
C
1
mA
Peak collector current
I
CM
1.5
A
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation,
T
S
77 C
P
tot
1.7
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65...+150
Thermal Resistance
98
Junction ambient
1)
R
thJA
K/W
Junction - soldering point
R
thJS
43
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group
1
1998-11-01
BCP 54M ... BCP 56M
2
Au -11-1998
Semiconductor Group
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Unit
Values
typ.
max.
min.
DC Characteristics
V
(BR)CEO
45
60
80
-
-
-
-
-
-
V
BCP 54M
BCP 55M
BCP 56M
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
BCP 54M
BCP 55M
BCP 56M
V
(BR)CBO
45
60
100
Collector-base breakdown voltage
I
C
= 100 A,
I
B
= 0
-
-
-
-
-
-
-
Emitter-base breakdown voltage
I
E
= 10 A,
I
C
= 0
-
5
V
(BR)EBO
nA
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
100
I
CBO
-
-
A
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 C
20
-
-
I
CBO
-
DC current gain 1)
I
C
= 5 mA,
V
CE
= 2 V
-
h
FE
-
25
-
250
h
FE
DC current gain 1)
I
C
= 150 mA,
V
CE
= 2 V
40
-
-
-
h
FE
25
DC current gain 1)
I
C
= 500 mA,
V
CE
= 2 V
-
V
0.5
-
-
V
CEsat
Collector-emitter saturation voltage1)
I
C
= 500 mA,
I
B
= 50 mA
Base-emitter voltage 1)
I
C
= 500 mA,
V
CE
= 2 V
V
BE(ON)
-
-
1
AC Characteristics
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f = 100 MHz
-
100
f
T
-
1) Pulse test: t
300
s, D = 2%
Semiconductor Group
2
1998-11-01
BCP 54M ... BCP 56M
3
Au -11-1998
Semiconductor Group
DC current gain
h
FE
=
f (I
C
)
V
CE
= 2V
EHP00268
BCP 54...56
3
10
mA
0
10
3
10
5
5
10
0
10
1
10
1
C
FE
h
2
10
2
10
C
100
5
25 C
-50 C
10
4
Total power dissipation
P
tot
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
200
400
600
800
1000
1200
1400
1600
mW
2000
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
T
S
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
3
1998-11-01
BCP 54M ... BCP 56M
4
Au -11-1998
Semiconductor Group
Collector cutoff current
I
CBO
=
f (T
A
)
V
CB
= 30V
0
10
EHP00269
BCP 54...56
A
T
150
-1
4
10
CBO
nA
50
100
0
10
1
10
3
10
C
10
2
max
typ
Transition frequency
f
T
=
f (I
C
)
V
CE
= 10V
10
EHP00267
BCP 54...56
0
3
10
mA
1
10
3
10
5
10
1
10
2
10
2
C
T
f
MHz
Base-emitter saturation voltage
I
C
=
f (V
BEsat
),
h
FE
= 10
0
10
EHP00270
BCP 54...56
BEsat
V
0
4
10
C
mA
0.2
1
10
2
10
3
10
0.4
0.6
0.8
1.2
V
C
100
25 C
-50 C
Collector-emitter saturation voltage
I
C
=
f (V
CEsat
),
h
FE
= 10
0
EHP00271
BCP 54...56
CEsat
V
0.4
V
0.8
10
0
10
1
3
10
C
mA
C
2
10
0.2
0.6
10
4
100
25 C
C
-50
Semiconductor Group
4
1998-11-01