Semiconductor Group
1
PNP Silicon AF Transistors
BC 327
BC 328
5.91
Type
Marking
Package
1)
Pin Configuration
BC 327
BC 327-16
BC 327-25
BC 327-40
BC 328
BC 328-16
BC 328-25
BC 328-40
Q62702-C311
Q62702-C311-V3
Q62702-C311-V4
Q62702-C311-V2
Q62702-C312
Q62702-C312-V3
Q62702-C312-V4
Q62702-C312-V2
TO-92
1
2
3
Ordering Code
C
B
E
1)
For detailed information see chapter Package Outlines.
q
High current gain
q
High collector current
q
Low collector-emitter saturation voltage
q
Complementary types: BC 337, BC 338 (NPN)
1
2
3
Semiconductor Group
2
BC 327
BC 328
Maximum Ratings
Parameter
Symbol
BC 327
Unit
Collector-emitter voltage
V
CE0
45
V
Collector-base voltage
V
CB0
50
Emitter-base voltage
V
EB0
Collector current
I
C
mA
Base current
I
B
mA
Total power dissipation,
T
C
= 66 C
P
tot
mW
Junction temperature
T
j
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
200
K/W
Peak collector current
I
CM
A
Junction - case
1)
R
th JC
135
Peak base current
I
BM
BC 328
25
30
5
800
100
625
150
1
200
Values
1)
Mounted on Al heat sink 15 mm
25 mm
0.5 mm.
Semiconductor Group
3
BC 327
BC 328
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
1)
I
C
= 100 mA;
V
CE
= 1 V
BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
I
C
= 300 mA;
V
CE
= 1 V
BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
h
FE
100
160
250
60
100
170
160
250
350
250
400
630
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 327
BC 328
V
(BR)CE0
45
25
nA
nA
A
A
Collector cutoff current
V
CB
= 25 V
BC 328
V
CB
= 45 V
BC 327
V
CB
= 25 V,
T
A
= 150 C
BC 328
V
CB
= 45 V,
T
A
= 150 C
BC 327
I
CB0
100
100
10
10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 100
A
BC 327
BC 328
V
(BR)CB0
50
30
Emitter-base breakdown voltage
I
E
= 10
A
V
(BR)EB0
5
V
Collector-emitter saturation voltage
1)
I
C
= 500 mA;
I
B
= 50 mA
V
CEsat
0.7
Base-emitter saturation voltage
1)
I
C
= 500 mA;
I
B
= 50 mA
V
BEsat
2
nA
Emitter cutoff current
V
EB
= 4 V
I
EB0
100
1)
Pulse test:
t
300
s,
D
2 %.
Semiconductor Group
4
BC 327
BC 328
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
200
Unit
Values
Parameter
Symbol
min.
typ.
max.
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
12
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
ibo
60
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