Semiconductor Group
1
NPN Silicon AF Transistors
BCX 58
BCX 59
5.91
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BCX 58 VIII
BCX 58 IX
BCX 58 X
BCX 59 VIII
BCX 59 IX
BCX 59 X
Q62702-C619
Q62702-C620
Q62702-C621
Q62702-C623
Q62702-C624
Q62702-C625
TO-92
C
B
E
1
2
3
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm
25 mm
0.5 mm.
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
Peak collector current
I
CM
Collector current
I
C
mA
Junction temperature
T
j
C
Total power dissipation,
T
C
= 70 C
P
tot
mW
Storage temperature range
T
stg
Collector-base voltage
V
CB0
Thermal Resistance
Junction - ambient
R
th JA
250
K/W
100
200
500
150
65 ... + 150
Emitter-base voltage
V
EB0
32
45
32
45
BCX 58
BCX 59
Peak base current
I
BM
200
7
Junction - case
2)
R
th JC
160
q
High current gain
q
Low collector-emitter saturation voltage
q
Complementary types: BCX 78, BCX 79 (PNP)
1
2
3
Semiconductor Group
2
BCX 58
BCX 59
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 2 mA
BCX 58
BCX 59
V
(BR)CE0
32
45
nA
nA
A
A
Collector cutoff current
V
CB
= 32 V
BCX 58
V
CB
= 45 V
BCX 59
V
CB
= 32 V,
T
A
= 150 C
BCX 58
V
CB
= 45 V,
T
A
= 150 C
BCX 59
I
CB0
20
20
10
10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
A
BCX 58
BCX 59
V
(BR)CB0
32
45
Emitter-base breakdown voltage
I
E
= 1
A
V
(BR)EB0
7
DC current gain
I
C
= 10
A,
V
CE
= 5 V
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X,
BCX 59 X
I
C
= 2 mA,
V
CE
= 5 V
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X,
BCX 59 X
I
C
= 100 mA,
V
CE
= 1 V
1)
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X,
BCX 59 X
h
FE
20
20
40
100
120
180
250
380
40
45
60
60
78
145
220
300
170
250
350
500
220
310
460
630
nA
Emitter cutoff current
V
EB
= 4 V
I
EB0
20
A
Collector cutoff current
V
CE
= 32 V,
V
BE
= 0.2 V,
T
A
= 100 C
V
CE
= 45 V,
V
BE
= 0.2 V,
T
A
= 100 C
I
CEX
20
20
1)
Pulse test:
t
300
s,
D
2 %.
Semiconductor Group
3
BCX 58
BCX 59
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Base-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 2.5 mA
V
BEsat
1.0
V
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 2.5 mA
V
CEsat
0.5
DC characteristics
Unit
Values
Parameter
Symbol
min.
typ.
max.
Base-emitter voltage
I
C
= 10
A,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 100 mA,
V
CE
= 1 V
1)
V
BE(on)
0.55
0.52
0.65
0.83
0.75
1)
Pulse test:
t
300
s,
D
2 %.
Semiconductor Group
4
BCX 58
BCX 59
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
200
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
3
Input capacitance
V
CB
= 0.5 V,
f
= 1 MHz
C
ibo
8
k
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X,
BCX 59 X
h
11e
2.7
3.6
4.5
7.5
10
4
Open-circuit reverse voltage transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X,
BCX 59 X
h
12e
1.5
2.0
2.0
3.0
Unit
Values
Parameter
Symbol
min.
typ.
max.
dB
Noise figure
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 k
f
= 1 kHz,
f
= 200 Hz
F
2
Short-circuit forward current transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X,
BCX 59 X
h
21e
200
260
330
520
S
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X,
BCX 59 X
h
22e
18
24
30
50
Semiconductor Group
5
BCX 58
BCX 59
Total power dissipation
P
tot
=
f
(
T
A
;
T
C
)
Permissible pulse load
R
thJA
=
f
(
t
p
)
Collector current
I
C
=
f
(
V
BE
)
V
CE
= 5 V (common emitter configuration)
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 5 V (common emitter configuration)
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